This paper gives some insights in the applications where PECVD nitrides can be introduced to replace the LPCVD layers and how the process parameters need to be varied to obtain the desired properties. Film properties like stress, hydrogen content, wet etch rate and deposition rate are reported. The nitrides are optimized for specific applications and examples on the influence of nitride propert...

Introduction Silicon oxynitride is a flexible material for use as planar optical waveguides because by changing the composition ( O N ratio) the refractive index can be tuned from 1.46 to 2.0'. Several methods can be used for deposition: PECVD, LPCVD and sputtering. The advantages of PECVD are easy control of composition, high deposition rate and low stress. A disadvantage is the high hydrogen ...

The introduction of new in situ sensing creates the possibility of directly controlling critical process variables in plasma enhanced chemical vapor deposition systems (PECVD). The complexity of this process makes it necessary to develop empirical models of the system dynamics. This paper describes the experimental and numerical procedures for identifying both transfer function and recurrent ne...

The wavelength selective linear absorption in communication C-band is investigated in CMOS-processed PECVD silicon nitride rings. In the overcoupled region, the linear absorption loss lowers the on-resonance transmission of a ring resonator and increases its overall quality factor. Both the linear absorption and ring quality factor are maximized near 1520 nm. The direct heating by phonon absorp...

High-quality single-walled carbon nanotubes (SWCNTs) have been synthesized from H2–CH4 mixtures on a MgO-supported bimetallic Mo/Co catalyst using microwave plasma-enhanced chemical vapor deposition (PECVD). Reaction parameters including temperature, H2:CH4 ratio, plasma power, and synthesis time have been examined to assess their influence on SWCNT synthesis. Raman spectroscopy and high-resolu...

1 Part 1: Covalent immobilisation of IGF-1 on PECVD-Si-Ti for orthopaedic biomaterial applications 1.

We have fabricated advanced metal–insulator–metal (MIM) capacitors with ultra-thin (200 Å) remote-PECVD Si3N4 dielectric layers having excellent electrical properties. The breakdown field strength of MIM capacitors with 200-Å-thick Si3N4 was larger than 3.5 MV/cm, which indicates the excellent quality of the deposited Si3N4 film. The main capacitance per unit area extracted by radio frequency (...

The use of the Plasma Enhanced Chemical Vapor Deposition techniques have increased during the last decades. PECVD attractiveness, basically due to the lowering of the substrate temperatures, has enlarged its uses because it allows an action of ions or excited species. However, the choice of the reactors is not always easy. After presenting the main domains of applications of the PECVD technique...

The fabrication of SiC MEMS pressure sensor based on novel vacuum-sealed method is presented in this paper. The sensor was fabricated using surface micromachining. Due to its excellent mechanical properties and high chemical resistance, PECVD (Plasma Enhanced Chemical Vapor Deposition) SiC was chosen as structural material. Polyimide is the sacrificial layer which solve stiction problem in proc...

Three-dimensional (3D) networks of carbon nanotubes (CNTs) were fabricated on a pillarpatterned substrate by plasma-enhanced chemical vapor deposition (PECVD). To fabricate 3D networks of CNTs, highly crystalline single-walled CNTs (SWCNTs) should be synthesize on the substrate. PECVD has advantages for low temperature growth and alignment of CNTs on the substrate, but it is difficult to synthe...