Monolithic microwave integrated circuits (MMIC’s) may be measured under relatively high-intensity lighting conditions. Later, when they are packaged, any anomalies found in subsequent measurements could be attributed to unwanted parasitics or box modes associated with the packaging. However, optical effects may not always be considered by radiofrequency (RF) and microwave engineers. For the fir...

We develop a mean-field statistical mechanical theory to examine the growth mechanisms and structures of fee (face-centered cubic) metal thin films grown on fc&O) metal substrates. Eleven hetero-interfaces with bulk cohesive energy differences as large as 4 eV and lattice mismatches ranging from 21% to 16% are examined in order to develop an understanding of how these intrinsic properties of th...

GaAs-based heterostructures comprised of GaAs1-xNx-GaAs1-ySby (x<0.03, y<0.35) multiple quantum wells (MQW) that utilize ‘W’-shaped type II transitions have potential for realizing high-performance monolithic VCSELs and low temperature-sensitivity edge-emitting lasers in the 1.55 μm wavelength region. MOVPE growth of GaAsSb is complicated by both thermodynamicly driven phase separation and kine...

The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been obtained. The phase diagrams of the superstructure change during the epitaxial growth of Sn on Si and on Ge(100) have been built. Using the phase diagram dat...

In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT) high electron mobility transistor technologies. Starting with a modulator-driver MMIC for optical transmission systems, we describe state of the art MMICs like a 94 GHz low-noise amplifier, a 35 GHz and a 60 GHz medium power amplifier and finally we demonstrate the feasibility of a monolithicall...

In this paper, a doubly balanced V-band star mixer has been designed following the design method developed for I-Q modulators applications. The mixer has been designed using a commercial GaAs pseudomorphic HEMT process library. The mixer exhibits RF bandwidth over 45-65 GHz with local oscillator isolation better than 30 dB, and achieved a typical conversion loss of 9 dB. The IF modulation bandw...