The introduction of new in situ sensing creates the possibility of directly controlling critical process variables in plasma enhanced chemical vapor deposition systems (PECVD). The complexity of this process makes it necessary to develop empirical models of the system dynamics. This paper describes the experimental and numerical procedures for identifying both transfer function and recurrent ne...

The application of plasma-enhanced chemical vapour deposition (PECVD) in the production and modification of carbon nanotubes (CNTs) will be reviewed. The challenges of PECVD methods to grow CNTs include low temperature synthesis, ion bombardment effects and directional growth of CNT within the plasma sheath. New strategies have been developed for low temperature synthesis of single-walled CNTs ...

This paper reports on the final main results of the Flexcellence project. The project was running for 3 years and its goal was the development of equipments and processes for cost-effective roll-to-roll production of high-efficiency flexible thin-film silicon solar cells and modules. All aspects necessary for the successful implementation of the technology could be considered simultaneously and...

This paper addresses the doping mechanism of amorphous semiconductors through the investigation of boron doped rf co-sputtered amorphous hydrogenated silicon. The activation energy and room temperature conductivity varied from 0.9 to 0.3 eV and from 10 12 to 10 4 Ohm .cm , respectively, by ranging the boron concentration from 0 to 3 at.%. These ranges of electronic properties are of the same or...

We have developed 0.1-μm gate-length InAlN/GaN high electron-mobility transistors (HEMTs) for millimeterwave (MMW) power applications, particularly at 71–76 and 81–86 GHz bands. The impacts of depth and width of the gate recess groove on electrical performance have been analyzed and compared. Competing passivation technologies, atomic layer deposition (ALD) aluminum oxide (Al2O3) and plasma-enh...

Carbon nanotubes (CNTs) and nanofibres (CNFs) are grown on bulk-micromachined silicon surfaces by thermal and plasma-enhanced chemical vapour deposition (PECVD), with catalyst deposition by electron beam evaporation or from a colloidal solution of cobalt nanoparticles. Growth on the peaked topography of plasma-etched silicon ‘micrograss’ supports, as well as on sidewalls of vertical structures ...

Different sizes of Ge nanocrystals embedded in a SiO2 matrix were formed by PECVD, and analyzed by TEM. Size effect of Ge nanocystals was demonstrated by Raman spectroscopy after excluding the thermal effect. OCIS codes: (160.4236) nanomaterial; (160.6000) semiconductor material;

Abstract Cobalt chromium alloys (CoCr) are commonly used as total disc replacement components. However, there concerns about its long-term biological effects. Coating the CoCr with a ceramic could improve implant’s biocompatibility and wear resistance. Silicon nitride (SiNx) coatings have emerged recent alternative to this end. While many evaluated physical vapour deposition (PVD) techniques de...

Single-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600 °C. The nanotubes are of high quality as characterized by microscopy, Raman spectroscopy, and electrical transport measurements. High performance field effect transistors are obtained with the PECVD nanotubes. Interestingly, electrical characterization reveals that nearly 90% of ...

Zirconia layers are often used as thermal barriers. In recent years, depositions by chemical vapor deposition methods using a metalorganic precursor (MOCVD) have been primarily investigated. Here, we combine MOCVD with plasma activation - plasma-enhanced (PECVD]) of the gas phase and/or growth surface to lower temperature and allow for flexible coating design. PECVD causes be transformed into c...