A theoretical investigation is made of the dispersion characteristics of plasmons in a twodimensional periodic system of semiconductor (dielectric) cylinders embedded in a dielectric (semiconductor) background. We consider both square and hexagonal arrangements and calculate extensive band structures for plasmons using a plane-wave method within the framework of a local theory. It is found that...

We report an experimental study on terahertz THz emission from Ga1−xInxSb with 0 x 1. THz emission is excited by femtosecond near-infrared laser pulses. For this material system THz emission is maximized for an In mole fraction x 0.5. The maximum in THz emission occurs as a result of carrier compensation NA NB for this specific material composition. The THz emission from n-type InSb is twice as...

The Semiconductor Electronics Division at the National Institute of Standards and Technology (NIST) hosted an International Conference on Narrow-Gap Semiconductors and Related Materials in Gaithersburg, MD on June 12-15, 1989. A brief background on narrow-gap semiconductors (NGSs) is given in this paper, along with an overview of the conference itself. The major section of this report is devote...

Spectroscopy of III-V Narrow Gap Semiconductor Quantum Wells

Network Materials In article number 2207492, Niklas Wolff, Ion Tiginyanu, Lorenz Kienle, and co-workers report on the synthesis structural characterization of a hybrid wide-band-gap semiconductor nanocomposite network interconnected hollow microtubes composed β-Ga2O3/ZnGa2O4 phases using X-ray powder diffraction transmission electron microscopy. The aero-network morphology shows ZnGa2O4-dominat...

The Mg(BiO2)2 is the orthorhombic crystal system acting as semiconductor in electric devices. To evaluate electronic band structures, the total density of state (TDOS) and the partial density of state (PDOS), Generalized Gradient Approximation (GGA) based on the Perdew–Burke–Ernzerhof (PBE0) was used for Mg(BiO2)2. The band gap was recorded at 0.959 eV, which is supported by a good semiconducto...

Recently, quantum computing has received a great deal of focus as a possible means of achieving rapid computational speeds when compared with that of classical computation. Nonetheless, in many of the current implementations of a “quantum computer”, the semiconductor platform has been largely overlooked. It has been previously demonstrated that it is possible to form the NOT gate in a coupled s...

Iron (II) disulfide (FeS2) is a semiconductor which belongs to the space group 6 3 h T Pa  . It has a cubic crystal system (primitive cubic). Iron (II) disulfide is used in Lithium metal sulfide batteries, solar photovoltaics, battery recycling and molding compounds. It has a narrow band gap value of 0.95 eV [1]. Tellurium (Te) is classified as metalloid (p-type semiconductor) and belongs to t...

A survey of most recent studies of optical absorption, photoluminescence, photoluminescence excitation, and photomodulated reflectance spectra of single-crystalline hexagonal InN layers is presented. The samples studied were undoped n-type InN with electron concentrations between 6 1018 and 4 1019 cm– 3. It has been found that hexagonal InN is a narrow-gap semiconductor with a band gap of about...