نتایج جستجو برای: nanotube device
تعداد نتایج: 693540 فیلتر نتایج به سال:
در این پایان نامه خواص و جنبه های مختلف کربن معرفی و مروری کلی بر روشهای ساخت ، ساختار و خواص انواع مختلف کربن از کربنهای bulk(شامل گرافیت ، گرافیت turbostratic، الیاف کربن، دوده هاو ... ) تا کربنهای نانومقیاس (شامل fullerenes ، کپسولهای نانومقیاس ، کربنهای nanotube و ... ) ارائه می شود. عمده کار متوجه کربنهای nanotube(اعم از multi-wall و single-wall ) است و ساختار ، عیوب شبکه ای و روشهای ساخت ...
We introduce a simple approach to fabricate an aligned carbon nanotube (ACNT) device for broadband polarization control in fiber laser systems. The ACNT device was fabricated by pulling from as-fabricated vertically-aligned carbon nanotube arrays. Their anisotropic properties are confirmed with various microscopy techniques. The device was then integrated into fiber laser systems (at two techno...
Articles you may be interested in Single carbon nanotube photovoltaic device Scanning photocurrent and photoluminescence imaging of a frozen polymer p-n junction Appl. Large-signal and high-frequency analysis of nonuniformly doped or shaped pn-junction diodes Direct probe of excitonic and continuum transitions in the photocurrent spectroscopy of individual carbon nanotube p-n diodes Appl.
Multiwall carbon nanotubes (MWCNTs) are grown via chemical vapour deposition method directly on a stainless steel substrate. Raman spectroscopy and transmission electron microscopy are the techniques chosen to characterize the structure of the synthesized carbon nanotubes: few structural defects are detected. After their removal from the stainless steel substrate, the as-grown MWCNTs are then a...
Multiwall carbon nanotubes (MWCNTs) are grown via chemical vapour deposition method directly on a stainless steel substrate. Raman spectroscopy and transmission electron microscopy are the techniques chosen to characterize the structure of the synthesized carbon nanotubes: few structural defects are detected. After their removal from the stainless steel substrate, the as-grown MWCNTs are then a...
In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in postgrowth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved ga...
The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that covering the nanotube channel proves high...
Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channe...
A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential. Different from a conventional device where the Fermi distribution ultimately limits the gate volta...
We investigate the electronic and optoelectronic properties of quasi-metallic nanotube pn-devices, which have smaller band gaps than most known bulk semiconductors. These carbon nanotube-based devices deviate from conventional bulk semiconductor device behavior due to their low-dimensional nature. We observe rectifying behavior based on Zener tunneling of ballistic carriers instead of ideal dio...
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