نتایج جستجو برای: molecular beam epitaxy
تعداد نتایج: 746525 فیلتر نتایج به سال:
Photoluminescence is used to optically characterize epitaxially-grown ZnSe. The ZnSe has been grown by three different growth techniques; molecular beam epitaxy, metalorganic molecular beam epitaxy and gas source molecular beam epitaxy. Photoluminescence measurements have been made for each growth method for a wide range of growth parameters. The effects of the growth parameters, as well as the...
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Articles you may be interested in RHEED transients during InAs quantum dot growth by MBE Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001) Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a " nucleation-augmented " method Appl. Area-controlled growth of InAs quantum dots and improvement of...
Following the first experimental realization of graphene, other ultrathin materials with unprecedented electronic properties have been explored, with particular attention given to the heavy group-IV elements Si, Ge and Sn. Two-dimensional buckled Si-based silicene has been recently realized by molecular beam epitaxy growth, whereas Ge-based germanene was obtained by molecular beam epitaxy and m...
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