We present a detailed investigation into the optical characteristics of individual InAs quantum dots QDs grown by metalorganic chemical vapor deposition, with low temperature emission in the telecoms window around 1300 nm. Using microphotoluminescence PL spectroscopy we have identified neutral, positively charged, and negatively charged exciton and biexciton states. Temperature-dependent measur...

We propose an array of submicrometer mirrors to assess luminescent nano-objects. Micromirror arrays (MMAs) are fabricated on Si (001) wafers via selectively doping Ga using the focused ion beam technique to form p-type etch stop regions, subsequent anisotropic chemical etching, and Al deposition. MMAs provide two benefits: reflection of luminescence from nano-objects within MMAs toward the Si (...

Self-catalyzed growth of axial In(x)Ga(1-x)As/GaAs heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the growth it was possible to vary the effective indium content up to x = 5%, as deduced from photoluminescence measurements. We have analyzed...

P. H. Tan,1,* X. D. Luo,2,5 Z. Y. Xu,1 Y. Zhang,3,† A. Mascarenhas,3 H. P. Xin,4 C. W. Tu,4 and W. K. Ge5 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China 2Jiangsu Provincial Key Lab of ASIC Design, Nantong University, Nantong, 226007, People’s Republic of China 3National Renewable ...

High-quality ZnO nanowires were synthesized using both Au catalysts and ZnO seeds by chemical vapor depositionon basal plane sapphire substrates. The nanowires were hexagonal and aligned with their c-axis closely perpendicular to the sapphire substrate surface. The structural characteristics of the nanowiresgrown using the different catalysts/seeds were compared using scanning electron microsco...

In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...

In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...