An avalanche photodiode (APD) based on an InGaAs/InGaAsP/InP structure containing separated absorption, charge and multiplication layers (SACM) was designed, fabricated and tested. The InGaAsP charge layer at the heterointerface between the InGaAs absorption and InP multiplication region allows optimization of the electric field distribution and suppression of the carrier capture at the heteroi...

Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) are investigated using electro-thermal, optical, and electronic modeling. The strain-compensated InGaAsP multi-quantum-well active region of the device example is vertically sandwiched between various distributed Bragg reflectors (DBRs). InP/InGaAsP, Si/Si02, and GaAs/AlAs mirrors are considered as well as novel combinations li...

A. 13-tan wavelength, InGaAsP-InP folded-cavity, siirface-emitting laser with CH4-H2 reactive ion-etched vertical and 45° angled facets was demonstrated for the first time. Continnoos-wave threshold currents of 32 mA have been achieved, with >15 mW CW power for the surface-emitted light These surface-emitting lasers with two dry-etched facets are suitable for wafer-level -esüng and for monolith...

2014 The heterogeneous equilibrium in the InGaAsP/HCl/H2 system has been studied at pressure and temperature conditions pertaining to the hydride-VPE growth. The results have been compared with the available experimental data on the growth of the above quaternary alloys lattice-matched to InP. A remarkably good agreement has been achieved with some existing data. Possible causes of discrepancie...

We demonstrate the monolithic integration of photonic crystal waveguides, a photonic crystal demultiplexer, a conventional waveguide and photodiodes in InGaAsP-based material. The photonic crystal demultiplexer consists of hexagonally arranged air holes. The inputted light at the wavelengths of 1530nm and 1550nm can be separated by the demultiplexing system. Keywords-component; Photonic crystal...