We discuss boron diffusion in biaxial tensile strained {001} Si and SiGe layer with kinetic Monte Carlo (KMC) method. We created strain in silicon by adding a germanium mole fraction to the silicon in order to perform a theoretical analysis. The strain energy of the charged defects was calculated from ab-initio calculation whereas the diffusivity of boron was extracted from the Arrhenius formul...

BACKGROUND After the recent outbreak of foot-and-mouth disease (FMD) in Korea, a vaccination policy has been applied to control the disease. In addition, several non-specific immune stimulators have been used without any scientific evidence that they would enhance the immune response after FMD vaccination and/or protect against FMD. Based on the current situation, the aim of this study was to e...

A study is made of germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors made by germanium implantation. Implanted Ge is found to diffuse from the single-crystal silicon substrate into deposited polysilicon emitter layers during rapid thermal anneal at 1045 °C. Measurements of germanium diffusivity in polycrystalline silicon are reported at temperatures between ...

DETECTOR RESOLUTION Resolution is a measure of the width (full width half max) of a single energy peak at a specific energy, either expressed in absolute keV (as with Germanium Detectors), or as a percentage of the energy at that point (Sodium Iodide Detectors). Better (lower FWHM value) resolution enables the system to more clearly separate the peaks within a spectrum. Figure 1.2 shows two spe...

Mechanical degradation of the electrode materials during electrochemical cycling remains a serious issue that critically limits the capacity retention and cyclability of rechargeable lithium-ion batteries. Here we report the highly reversible expansion and contraction of germanium nanoparticles under lithiation-delithiation cycling with in situ transmission electron microscopy (TEM). During mul...

DETECTOR RESOLUTION Resolution is a measure of the width (full width half max) of a single energy peak at a specific energy, either expressed in absolute keV (as with Germanium Detectors), or as a percentage of the energy at that point (Sodium Iodide Detectors). Better (lower FWHM value) resolution enables the system to more clearly separate the peaks within a spectrum. Figure 1.2 shows two spe...

Germanium nanowires (GeNWs) were synthesized using chemical vapor deposition (CVD) based on vapor–liquid–solid (VLS) mechanism with Au nanoparticles as catalyst and germanium tetrachloride (GeCl4) as a precursor of germanium. Au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in Au colloidal s...

Compared with direct-gap semiconductors, the valley degeneracy of silicon and germanium opens up new channels for spin relaxation that counteract the spin degeneracy of the inversion-symmetric system. Here the symmetries of the electron-phonon interaction for silicon and germanium are identified and the resulting spin lifetimes are calculated. Room-temperature spin lifetimes of electrons in sil...

We show a quantitative connection between Refractive Index Profiles (RIP) and measurements made by an Atomic Force Microscope (AFM). Germanium doped fibers were chemically etched in hydrofluoric acid solution (HF) and the wet etching characteristics of germanium were studied using an AFM. The AFM profiles were compared to both a concentration profile of the preform determined using a Scanning E...