We report the control of the growth mode of Bi(2)FeCrO(6) thin and ultrathin films by either tuning the pulsed laser deposition parameters or by using a buffer layer. The films are epitaxial and the heterostructures exhibit very smooth interfaces, thus eliminating the main obstacle in the realization of tunnel junctions. By characterizing the functional properties of thin films we find that Bi(...

In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attribu...

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A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin...

Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelec...

Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged domain walls in ferroelectric thin films during simple polarization switching using either a conductive probe tip or patterned top electrodes...

Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500 degrees C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile mem...

A computational model developed based on the phase-field approach is used to model domain structures in ferroelectric thin films and to quantify the effects of strain and applied electric field on the microstructural evolution, and on the induced dielectric, electrostrictive, and piezoelectric film properties. Theoretically predicted vortex-like polydomain and experimentally observed bidomain a...

Multiferroic La-doped BiFeO3 thin films have been prepared by a sol-gel plus spin-coating process, and the local magnetoelectric coupling effect has been investigated by the magnetic-field-assisted scanning probe microscopy connected with a ferroelectric analyzer. The local ferroelectric polarization response to external magnetic fields is observed and a so-called optimized magnetic field of ~4...

Control over ferroelectric polarization variants in BiFeO3 films through the use of various vicinal SrTiO3 substrates is demonstrated. The ferroelectric polarization variants in these films are characterized by piezoelectric force microscopy and the corresponding structural variants are carefully analyzed and confirmed by X-ray diffraction. Implementation of this approach has given us the abili...