In this research, the lifetime of green organic light emitting diodes (OLEDs) is studied using four passivation layers. To encapsulate the OLEDs, MgF2, YF3, composed of alternating MgF2/ZnS and YF3/ZnS layers were grown by thermal vacuum deposition. Measurements show that the device lifetime is significantly improved by using YF3 and ZnS as passivation layers. However, diodes encapsulated by Mg...

This paper reports the design, fabrication and characterization of high voltage 4H-SiC merged PiN/Schottky-barrier (MPS) diodes with an active area of 1.4mm. For comparison purposes, Schottky barrier, PiN and MPS diodes of smaller size (8.1x10mm) have also been designed and fabricated on the same wafer with a 30μm, n=2x10cm doped drift layer. The Schottky spacing between the adjacent p+ regions...

Thick film 5 m thick semiconducting polymer diodes incorporating poly triarylamine PTAA have been produced and applied as direct x-ray detectors. Experiments determined that a rectifying diode behavior persists when increasing the thickness of the active layer above typical thin film thicknesses 1 m , and the electrical conduction mechanism of the diodes has been identified. Direct current and ...

Monolithic diode grids have been fabricated on 2 cm square gallium-arsenide wafers with 1600 Schottky-barrier varactor diodes. Shorted diodes are detected with a liquid-crystal technique, and the bad diodes are removed with an ultrasonic probe. A small-aperture reflectometer that uses wavefront division interference was developed to measure the reflection coefficient of the grids. A phase shift...

Depositions on surfaces of semiconductor wafers of InP and GaN were performed from isooctane colloid solutions of palladium (Pd) nanoparticles (NPs) in AOT reverse micelles. Pd NPs in evaporated colloid and in layers deposited electrophoretically were monitored by SEM. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd...

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We report a method to construct reprogrammable circuits based on organic electrochemical (EC) p-n junction diodes. The diodes are built up from the combination of the organic conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and a polymer electrolyte. The p-n diodes are defined by EC doping performed at 70 °C, and then stabilized at -30 °C. The reversible EC reaction ...

For the first time, the overheating temperature ∆Tp–n of the active region in green light-emitting diodes based on Group III nitrides has been determined as a function of the forward current amplitude I. It has been shown that in contrast to light-emitting diodes, in which the current–voltage characteristics are adequately described by known theories of rectification in p–n junctions and ∆Tp–n ...