نتایج جستجو برای: dielectric device

تعداد نتایج: 711473  

2016
Junga Ryou Yong-Sung Kim Santosh KC Kyeongjae Cho

Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we de...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تبریز - دانشکده فیزیک 1386

چکیده ندارد.

2001
Igor Polishchuk Chenming Hu

A comprehensive study of the intrinsic reliability of a 1.4-nm (equivalent oxide thickness) JVD Si3N4 gate dielectric subjected to constant-voltage stress has been conducted. The stress leads to the generation of defects in the dielectric. As the result, the degradation in the threshold voltage, subthreshold swing, gate leakage current, and channel mobility has been observed. The change in each...

H R Zangeneh, M Asadnia Fard Jahromi,

A metallic coupler is proposed to interface a silicon on insulator (SOI) waveguide with a narrow hybrid plasmonic waveguide (200× 200 nm). The device operation is investigated and optimized to attain the best tradeoff between the mode confinement and the propagation loss. Calculations reveal that a high confinement and low loss of the energy is achieved from a silicon slab waveguide into the di...

Journal: :Nature materials 2009
Yun Gui Ma C K Ong Tomás Tyc Ulf Leonhardt

Transformation optics is a concept used in some metamaterials to guide light on a predetermined path. In this approach, the materials implement coordinate transformations on electromagnetic waves to create the illusion that the waves are propagating through a virtual space. Transforming space by appropriately designed materials makes devices possible that have been deemed impossible. In particu...

2014
Chin-Sheng Pang Jenn-Gwo Hwu

Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO2/SiO2/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the breakdown field of the devices. Meanwhile, the resistance of the dielectric after breakdown for dev...

Journal: :Optics letters 2006
E M Vuelban N Bhattacharya J J M Braat

We propose and demonstrate a novel liquid deformable mirror, based on electrocapillary actuation, for high-order wavefront correction. The device consists of a two-dimensional array of vertically oriented microchannels filled with two immiscible liquids, an aqueous electrolyte, and a viscous dielectric liquid, where the dielectric liquid overfills the top end of the channel and forms a thin lay...

Journal: :Journal of the Japan Society of Applied Electromagnetics and Mechanics 2014

Journal: :IOP Conference Series: Earth and Environmental Science 2020

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