We report on the Czochralski method for single silicon crystal growth and discuss heat and mass transfer and defect formation in the crystal. A re ector was used for separation of the heating and cooling areas in the furnace enabling us to speed up crystal growth. The melt ow to stabilize the temperature distribution in a crucible was controlled using transverse magnetic elds in a large-scale s...

This is the second part of a two-article series investigating presence an inverse response in measurement ingot radius Czochralski process for monocrystalline silicon production, when deduced from camera image bright ring at meniscus connecting solid crystal to melt. Such responses are known pose fundamental limitation achievable control performance. However, measurement, artefact technique and...

The Czochralski method of the industrial production of a silicon single crystal consists of pulling up the single crystal from the silicon melt. The flow of the melt during the production is called the Czochralski flow. The mathematical description of the flow consists of a coupled system of six P.D.E. in cylindrical coordinates containing Navier-Stokes equations (with the stream function), hea...

The feasibility to grow bulk La-GPS:Ce scintillation crystals by the Czochralski method using Mo crucibles has been reported.

Single crystals of GdCa4O(BO3)3 were examined to determine their thermal properties. Samples were grown by the Czochralski pulling technique. There were three types of samples: a pure crystal, the crystal doped with neodymium (4 at.% of Nd), and the third one doped with ytterbium (7 at.% of Yb). All samples were rectangular prisms with edges parallel to the axes of the optical indicatrix X, Y ,...

Single crystal silicon has played the fundamental role in electronic industry since the second half of the 20th century and still remains the most widely used material. Electronic devices and integrated circuits are fabricated on single-crystal silicon wafers which are produced from silicon crystals grown primarily by the Czochralski (CZ) technique. Various defects are formed in the growing cry...

The binary phase diagram CaF2–SrF2 was investigated by differential thermal analysis (DTA). Both substances show unlimited mutual solubility. An azeotropic point showing a minimum melting temperature of Tmin = 1373 C for the composition Ca0.582Sr0.418F2. Close to this composition, homogeneous single crystals up to 30mm diameter without remarkable segregation could be grown by the Czochralski me...