نتایج جستجو برای: cvd processes

تعداد نتایج: 544582  

2006
Nancy Swords

Inflammation is clearly recognized as a central component in the development and progression of cardiovascular disease (CVD). What is not clear, however, is how to best identify and monitor pathophysiologic inflammatory processes leading to acute coronary events. Many studies have focused on the potential of circulating biomarkers of inflammation to define risk of incident CVD events and morbid...

Journal: :Environmental Health Perspectives 1997
J Fawell D Robinson R Bull L Birnbaum G Boorman B Butterworth P Daniel H Galal-Gorchev F Hauchman P Julkunen C Klaassen S Krasner J Orme-Zavaleta J Reif R Tardiff

Background: The basis for ethnic differences in cardiovascular disease (CVD) susceptibility is not fully understood. We investigated patterns of population differentiation (FST) of a set of genes in etiologic pathways of CVD among 3 ethnic groups: Yoruba in Nigeria (YRI), Utah residents with European ancestry (CEU), and Han Chinese (CHB) + Japanese (JPT). We identified 37 pathways implicated in...

Journal: :Arteriosclerosis, thrombosis, and vascular biology 2006
Nancy Swords Jenny

Inflammation is clearly recognized as a central component in the development and progression of cardiovascular disease (CVD). What is not clear, however, is how to best identify and monitor pathophysiologic inflammatory processes leading to acute coronary events. Many studies have focused on the potential of circulating biomarkers of inflammation to define risk of incident CVD events and morbid...

2016
Tuung Luoh Yu-Kai Huang Yung-Tai Hung Kuang-Chao Chen

Titanium nitride (TiN) not only was utilized in the wear-resistant coatings industry but it was also adopted in barrier processes for semiconductor manufacturing. Barrier processes include the titanium (Ti) and TiN processes, which are commonly used as diffusion barriers in via/contact applications. However, engineers frequently struggle at the via/contact module in the beginning of every techn...

Journal: :acta medica iranica 0
nasrin dashti department of clinical laboratory sciences, school of allied medical sciences, tehran university of medical sciences, tehran, iran. nahid einollahi department of clinical laboratory sciences, school of allied medical sciences, tehran university of medical sciences, tehran, iran. fariba nabatchian department of clinical laboratory sciences, school of allied medical sciences, tehran university of medical sciences, tehran, iran. mostafa moradi sarabi departments of medical biochemistry, school of medicine, tehran university of medical sciences, tehran, iran. mitra zarebavani department of clinical laboratory sciences, school of allied medical sciences, tehran university of medical sciences, tehran, iran.

protein- energy malnutrition, wasting and inflammation are frequent complication among patients with end-stage renal disease (esrd). malnutrition is associated with cardiac co-morbidity, inflammation and poor survival in esrd patients. serum albumin is a well-known marker of nutrition in esrd patients. serum albumin is still the most commonly used nutritional marker in esrd patients. c-reactive...

Journal: :Circulation 2007
Laura L Hayman Janet C Meininger Stephen R Daniels Brian W McCrindle Liz Helden Joyce Ross Barbara A Dennison Julia Steinberger Christine L Williams

Cardiovascular disease (CVD) is a leading cause of morbidity and premature mortality in women and men in the United States, most of the industrialized world, and many developing countries.1 Data accumulated over the past 3 decades indicate that atherosclerotic-CVD processes begin early in childhood and are influenced over the life course by genetic and potentially modifiable risk factors and en...

Journal: :ACS nano 2012
Jack Chan Archana Venugopal Adam Pirkle Stephen McDonnell David Hinojos Carl W Magnuson Rodney S Ruoff Luigi Colombo Robert M Wallace Eric M Vogel

Field-effect transistors fabricated on graphene grown by chemical vapor deposition (CVD) often exhibit large hysteresis accompanied by low mobility, high positive backgate voltage corresponding to the minimum conductivity point (V(min)), and high intrinsic carrier concentration (n(0)). In this report, we show that the mobility reported to date for CVD graphene devices on SiO(2) is limited by tr...

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