ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20-100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous su...

ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20-100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous su...

In this study, ZnO-Sn2S3 core-shell nanorod heterostructures were synthesized by sputtering Sn2S3 shell layers onto ZnO rods. The Sn2S3 shell layers consisted of sheet-like crystallites. A structural analysis revealed that the ZnO-Sn2S3 core-shell nanorod heterostructures were highly crystalline. In comparison with ZnO nanorods, the ZnO-Sn2S3 nanorods exhibited a broadened optical absorption ed...

ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20-100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous su...

High-quality ZnO films were grown on Si(1 0 0) substrates with low-temperature (LT) ZnO buffer layers by an electron cyclotron resonance (ECR)-assisted molecular-beam epitaxy (MBE). In order to investigate the optimized buffer layer temperature, ZnO buffer layers of about 1.1 mm were grown at different growth temperatures of 350, 450 and 550 1C, followed by identical high-temperature (HT) ZnO f...

ZnO nanowires doped with Mg have been successfully prepared on Au-coated Si (111) substrates using chemical vapor deposition method with a mixture of ZnO, Mg, and activated carbon powders as reactants at 850 ◦C. The structural, compositional, morphological and optical properties of the samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscop...

In this work, we have demonstrated that amorphous ZnO nanobranches (a-ZnO NBs) could spontaneously react from the crystalline ZnO NWs (c-ZnO NWs) at specific humid environment. The spontaneous reaction mechanism and result can be analyzed by humidity controlling and optical microscope (OM)/scanning electron microscope (SEM)/Kelvin probe force microscopy (KPFM)/transmission electron microscopy (...

Hierarchical Si/ZnO trunk-branch nanostructures (NSs) have been synthesized by hot wire assisted chemical vapor deposition method for trunk Si nanowires (NWs) on indium tin oxide (ITO) substrate and followed by the vapor transport condensation (VTC) method for zinc oxide (ZnO) nanorods (NRs) which was laterally grown from each Si nanowires (NWs). A spin coating method has been used for zinc oxi...

We have recently reported fabrication of ZnO nanobridge devices using a single-step thermal evaporation method. In this fabrication process, e completely eliminated the need of either any metal catalysts or a ZnO seed layer to synthesize the ZnO nanobridges. As initially postulated, he morphology of an anisotropic crystalline substrate alone defines the growth region to prevent the random growt...

Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were grown by pulsed laser deposition on Al2O3 with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60 twinning for the (222) oriented crystals. Sharp intense spots in the SAED p...