نتایج جستجو برای: cnfet

تعداد نتایج: 94  

2016
Mehdi Bagherizadeh Mohammad Eshghi

Scaling challenges and limitations of conventional silicon transistors have led the designers to apply novel nano-technologies. One of the most promising and possible nano-technologies is CNT (Carbon Nanotube) based transistors. CNFET have emerged as the more practicable and promising alternative device compared to the other nanotechnologies. This technology has higher efficiency compared to th...

Journal: :Microelectronics Reliability 2015
Carmen G. Almudéver Antonio Rubio

Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit characteristics rivaling those of state-of-the-art Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). However, as any technology that is in development, CNFET fabrication process still have some imperfectio...

2011
Mehdi Bagherizadeh Mohammad Eshghi

In this paper, two novel low-power and high-speed carbon nanotube full-adder cells in dynamic logic style are presented. Carbon nanotube field-effect transistors (CNFETs) are efficient in designing a high performance circuit. To design our full-adder cells, CNFETs with three different threshold voltages (low threshold, normal threshold, and high threshold) are used. First design generates SUM a...

Journal: :IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 2018

Journal: :IEEE Transactions on Very Large Scale Integration Systems 2022

In this article, we propose a carbon nanotube (CNT) field-effect transistor (CNFET)-based static random access memory (SRAM) design at the 5-nm technology node that is optimized based on tradeoff between performance, stability, and power efficiency. addition to size optimization, physical model parameters including CNT density, diameter, CNFET flat band voltage are evaluated for SRAM performanc...

2012
S. S. Chopade Dinesh V Padole

Subthreshold VLSI circuits design received ample interest due to rapid growth of portable devices. The portable domain places in flexible limitation on the power dissipation. Though, device operating in subthreshold region shows huge potential towards satisfying the ultra low power requirement, it holds lots of difficult design issues. As integration density of interconnects increases at every ...

Journal: :Electronics 2021

Power consumption and data processing speed of integrated circuits (ICs) is an increasing concern in many emerging Artificial Intelligence (AI) applications, such as autonomous vehicles Internet Things (IoT). Existing state-of-the-art SRAM architectures for AI computing are highly accurate can provide high throughput. However, these SRAMs have problems that they consume power occupy a large are...

Journal: :journal of advances in computer research 0
mehdi bagherizadeh department of computer engineering, science and research branch, islamic azad university, tehran, iran mohammad eshghi faculty of electrical engineering, shahid beheshti university. g.c., tehran, iran

scaling challenges and limitations of conventional silicon transistors have led the designers to apply novel nano-technologies. one of the most promising and possible nano-technologies is cnt (carbon nanotube) based transistors. cnfet have emerged as the more practicable and promising alternative device compared to the other nanotechnologies.  this technology has higher efficiency compared to t...

Journal: :International Journal of Engineering and Technologies 2020

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