investigating the parameters influencing the behavior of buried pipelines under dynamic loading is of great importance. in this study the soil structure interaction of the pipelines with the surrounding soil was addressed using shaking table tests. wave propagation along the soil layers was also included in the study. the semi infinite nature of the field was simulated using a laminar shear box...

Silicon-Germanium Heterojunction Metal-Oxide-Semiconductor Field-EffectTransistors (SiGe HMOSFETs) have been successfully fabricated on Si substrate. The semiconductor heterostructure, which was grown by gas-source molecular beam epitaxy (GS-MBE), was initiated by the deposition of a Si0.7Ge0.3 “virtual substrate”. The n-type transistors were fabricated using a standard MOS process. The channel...

This paper reports on swift heavy ion beam induced epitaxial crystallization of a buried Si3N4 layer. Transmission electron microscopy and selected area diffraction patterns have been used to study the epitaxial growth of the buried Si3N4 layer. We observe good epitaxial crystallization at 150 C and 200 C, respectively for 70 MeV Si and 100 MeV Ag ions at an ion fluence of 1 × 10 ions cm. The f...

The localization of the chlorophyll-protein complexes inside the thylakoid membrane of Acetabularia mediterranea was determined by fractionating the chloroplast membrane with EDTA and Triton X-100, by using pronase treatment, and by labeling the surface-exposed proteins with 125I. The effects of the various treatments were established by electrophoresis of the solubilized membrane fractions and...

A silicon metal–semiconductor–metal photodetector with high-efficiency and high-speed in the infrared is reported. The high performance is achieved by using a Si-on-insulator substrate with a patterned nanometer-scale scattering reflector buried underneath a 170-nm-thick Si active layer. This scattering reflector causes light to be trapped inside the thin Si active layer, resulting in a fast an...

We show that a buried oxide layer forming a current aperture in an all epitaxial vertical-cavity surface emitting laser has a profound influence on the optical and electrical characteristics of the device. The lateral index variation formed around the oxide current aperture leads to a shift in the cavity resonance wavelength. The resonance wavelength under the oxide layer can thus be manipulate...