We have extended our experimentally constrained molecular relaxation technique P. Biswas et al., Phys. Rev. B 71, 54204 2005 to hydrogenated amorphous silicon: a 540-atom model with 7.4% hydrogen and a 611-atom model with 22% hydrogen were constructed. Starting from a random configuration, using physically relevant constraints, ab initio interactions, and the experimental static structure facto...

Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO2. Amorphous silicon devices exhibited mobility values of 1.3 cmVs, which are very high taking into account the amorphous nature of the material. Nanocrystalline transist...

A new device called “Solant” (for SOLar cell – ANTenna) is presented in this paper. It is a combination of thin-film amorphous silicon solar cells and flat printed antennas. A proton irradiation campaign has also been carried out on a series of n-i-p amorphous and p-i-n micromorph [microcrystalline (μc-Si:H) and amorphous (a-Si:H)] silicon tandem solar cells. The effect of thermal annealing on ...

Simulations from a family of atomistic structural models for unhydrogenated amorphous silicon suggest that fluctuation electron microscopy experiments have observed orientational order of paracrystalline grains in amorphous silicon. This order may consist of correlations in the orientation of nearby paracrystalline grains or anisotropy in the grain shape. This observation makes a natural connec...

Thin films of nanostructured silicon (ns-Si : H) were deposited by plasma-enhanced chemical vapor deposition in the presence of silicon nanoparticles at 100 ±C substrate temperature using a silane and hydrogen gas mixture under continuous wave (cw) plasma conditions. The nanostructure of the films has been demonstrated by diverse ways: transmission electron microscopy, Raman spectroscopy, and x...

An electric field was applied to a conductive layer to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Complete crystallization was observed via Joule heating under typical processing conditions. Crystallization was accomplished throughout the sample within the range of microseconds of the heating, thus demonstrating the p...

Silicon direct bonding (SDB) is a bonding technique of two silicon wafers together with homogeneous or heterogeneous layers without the use of any intermediate adhesives. The SDB technique simplifies the process and cost by reducing mask level, and its necessity has increased in terms of its fields of applications such as power devices, SOI, sensors and actuators. Factors which can affect direc...

B Bader Theory for charge analysis 77 Bibliography 89 Introduction The wide eeort of the past decade to understand physical properties of the semiconductor heterojunctions has provided many fundamental and applica-tive results 1, 2]. The experience acquired on simple systems like isovalent common anion heterojunctions, e.g. GaAs/AlAs, has been successfully extended to heterovalent systems and a...

We have experimentally determined the crystallization rate of plasma-produced amorphous silicon powder undergoing in-flight thermal annealing, and have found a significant reduction in the activation energy for crystallization compared to amorphous silicon thin films. This finding allows us to shed light onto the mechanism leading to the formation of high quality nanocrystals in non-thermal pla...