نتایج جستجو برای: workfunction
تعداد نتایج: 95 فیلتر نتایج به سال:
Metal corrugated surfaces have the potential of enhancing optical absorption through surface plasmon (SP) excitation facilitated by light-metal interactions. The successful utilization of metal corrugation induced optical absorption can improve the response of free carrier absorption (FCA), based HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors. This article rep...
The variation in spectral shape around the threshold frequencies between model and experimental responsivity spectra in heterojunction interfacial workfunction internal photoemission (HEIWIP) infrared detectors was investigated. This is attributed to the loss of photoexcited carriers, within the escape cone, prior to photoemission. The energy dependent transmission of excited carriers is incorp...
The catalytic activity and selectivity of platinum metals can be altered dramatically and reversibly by interfacing the metal with a solid electrolyte which supplies ions onto the catalyst sugace under the influence of an external potential. The induced change in catalytic rate is orders of magnitude higher than the rate of ion supply. This new effect has revealed a surprisingly simple exponent...
The performance of GaAs multilayer (p-i-p-i-. . .) homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (FIR) detectors as a function of emitter layer (p) concentration is reported. The dark current characteristics have been investigated and compared with a model which includes the space charge, tunneling, and multiple-image-force effects. The experimentally determi...
We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected workfunction and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer are examin...
Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively reduce the gate thickness further due to the poly-depletion effect. Fully silicided metal gate (FUSI) has been proven to be a promising solution. FUSI metal gate can significant...
The p-n junction cannot be implemented at the nanoscale because the doping is very often a detrimental effect. The doping could change dramatically the properties of a nanomaterial such as graphene or single-walled carbon nanotubes. Therefore, we will present two graphene diodes without a p-n junction. The first is based on the dissimilar metals having workfunction below and above the graphene ...
Boron and nitrogen doped graphenes are highly promising materials for electrochemical applications, such as energy storage, generation and sensing. The doped graphenes can be prepared by a broad variety of chemical approaches. The substitution of a carbon atom should induce n-type behavior in the case of nitrogen and p-type behavior in the case of boron-doped graphene; however, the real situati...
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