Aluminum nitride (AlN) thin films have potential applications in microelectronic and optoelectronic devices. In this study, AlN thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. The X-ray diffraction (XRD) spectra revealed that the structure of films with thickness of - nm was amorphous, while the polycrystalline hexagonal AlN with a...

The effect at the nanoscale of a Ti interfacial layer on performances TiN/HfZrO/TiN capacitors is reported. Ferroelectric hafnium zirconium oxide (HZO) synthesized by magnetron sputtering ceramic target. Titanium nitride top and bottom electrodes are grown reactive sputtering. insertion an ultra‐thin electrode/HZO interface impacts crystalline phase electrical properties ferroelectric HZO. Foll...

This paper presents a comparative study of titanium (Ti), platinum (Pt), and nitride (TiN) micro-electro mechanical systems based micro-heaters. In the present study, common geometry thin film thicknesses were selected to achieve comparable base resistances for all three microheater materials. Titanium, platinum, films are deposited using DC magnetron sputtering, E-beam evaporation, reactive sp...

The work is focused on thin film technologies especially on sputtering of dielectric thin film layers. The set of thin film capacitors was created on silica glass substrate. Aluminum electrodes of separated capacitors are deposited by method of vacuum evaporation. The AlN dielectric layer was prepared by reactive high frequency sputtering from aluminum target in nitrogen atmosphere. Dielectric ...

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures" (1998). Faculty Publications from the Department of Electrical and Computer Engineering. 14. In situ infrared ͑IR͒ spectroscopy and visible-light ͑VIS͒ spectroscopic ell...

The pH sensing and nonideal characteristics of a ruthenium nitride (RuN) sensing membrane pH sensor were investigated. RuN thin films were deposited from a 99.9% ruthenium target on p-type silicon substrates using radio frequency (r.f.) sputtering with N(2) gas. Subsequently, the nanometric structure and surface morphology of RuN thin films were determined. The sensitivity of the RuN sensing me...

Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be...