نتایج جستجو برای: silicon pad
تعداد نتایج: 95424 فیلتر نتایج به سال:
Diamond is one of the hardest and most difficult to polish materials. In this paper, the polishing of {111} and {100} single crystal diamond surfaces by standard chemical mechanical polishing, as used in the silicon industry, is demonstrated. A Logitech Tribo Chemical Mechanical Polishing system with Logitech SF1 Syton and a polyurethane/polyester polishing pad was used. A reduction in roughnes...
A proof-of-concept study demonstrated the feasibility of a novel gel-pad microarray on porous silicon chips, by initiation of an atom transfer radical propagation (ATRP) polymerisation of (polyethylene glycol) methacrylate (PEGMA) with surface Si-H species, stepwise chemical conversions of the gel membrane to an NTA-Ni2+/histidine-tagged protein system, and matrix-assisted laser desorption/ioni...
We have developed a carbon nanotube (CNT) pad to replace black, which is essential for electric muscle stimulation (EMS) suits that can provide efficient exercise effects in short time. The optimized CNT had 10 times lower concentration but showed 20 resistance than the black pad. In case of peak voltage indicating EMS performance, it was confirmed (4.0 wt%) 25.9 V and (40 6.5 V, about 4 better...
Cu wire is replacing Au wire in the microelectronic industry due to its lower cost. However, during Cu ball bonding one of the main challenges is the increased stress that can damage the pad and underpad layers. Past work showed that using ultrasound superimposed together with impact force (pre-ultrasound) results not only in a softer bonded ball, but also in a flatter ball/pad interface. In th...
The turn-on mechanism of silicon-controlled rectifier (SCR) devices is essentially a current triggering event. While a current is applied to the base or substrate of an SCR device, it can be quickly triggered on into its latching state. In this paper, latchup-free electrostatic discharge (ESD) protection circuits, which are combined with the substrate-triggered technique and an SCR device, are ...
OVERVIEW: The introduction of low-k and ultralow-k dielectric films in copper-interconnect structures presents serious challenges in test, assembly, and packaging of advanced devices. Low-k films support higher circuit speeds and enable smaller feature sizes by increasing the insulation capability around copper interconnects, but compared to previous generations of silicon-dioxide dielectric la...
System-Level electrostatic discharge (ESD) has become increasingly demanding with silicon technology scaling towards lower voltages and the need for designing cost-effective and ultra-low power components. Indirect ESD test and direct air discharge test has been conducted on the MSP-EXP430G2 Launch Pad Development Board which has the state-of-the-art protection for system level ESD. The recogni...
This paper describes an improved procedure for the efficient and facile synthesis of 4-aryl substituted 3, 4-dihydropyrimidinones under mild reaction conditions with excellent yields using inexpensive silica chloride under solvent free conditions.
There is a compelling need for a high frame rate imaging detector with a wide dynamic range, from single xrays/pixel/pulse to > 106 x-rays/pixel/pulse, that is capable of operating at both x-ray free electron laser (XFEL) and 3rd generation sources with sustained fluxes of > 1011 x-rays/pixel/s [1, 2, 3]. We propose to meet these requirements with the High Dynamic Range Pixel Array Detector (HD...
Samples of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared: single-crystal silicon with two doping levels, polycrystalline silicon with two doping levels, polycrystalline germanium, polycrystalline SiGe, graphite, fused quartz, Pyrex 7740, nine other preparations of silicon dioxide, four preparat...
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