Keywords: HfO 2 Analytical model Surface potential Ferroelectric Nonvolatile memory Fe-TFET a b s t r a c t The implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field effect transistors with silicon-doped HfO 2 is proposed and theoretically examined for the first time, showing that ferroelectric nonvolatile tunnel field effect transistor (Fe-TFET) can operate as...

Although the various effects of strain on silicon are subject of intensive research since the 1950s the physical background of anomalous piezoresistive effects in Si nanowires (NWs) is still under debate. Recent investigations concur in that due to the high surface-to-volume ratio extrinsic surface related effects superimpose the intrinsic piezoresistive properties of nanostructures. To clarify...

In this work, we present a gate-all-around (GAA) low-temperature poly-Si nanowire (NW) junctionless device with TiN/Al.

In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N+ pockets in both the lateral and vertical directions, which increases the...

In this paper, it is designed and analyzed the n type tunneling Field Effect Transistor (TFET) to obtain sub-threshold swing parameter (SS) below 60 mV/dec, it is better than the limit of conventional MOSFET. SILVACO TCAD is used for rigorous study of p-i-n structure based on Silicon. It is minimised the short channel effect of SiO2 material. It is obtained that TFET has good ability to produce...

In order to implement complementary logic function with L-shaped tunneling field-effect transistors (TFETs), current drivability and subthreshold swing (SS) need to be improved more. For this purpose, highk material such as hafnium dioxide (HfO2) has been used as gate dielectric rather than silicon dioxide (SiO2). The effects of device parameters on performance have been investigated and the de...

Planar and nanowire (NW) tunneling field effect transistors (TFETs) have been fabricated on ultra thin strained and unstrained SOI with shallow doped Nickel disilicide (NiSi2) source and drain (S/D) contacts. We developed a novel, self-aligned process to form the p-i-n TFETs which greatly easies their fabrication by tilted dopant implantation using the high-k/metal gate as a shadow mask and dop...

For point-of-care (POC) applications, robust, ultrasensitive, small, rapid, low-power, and low-cost sensors are highly desirable. Here, we present a novel biosensor based on a complementary metal oxide semiconductor (CMOS)-compatible silicon nanowire tunneling field-effect transistor (SiNW-TFET). They were fabricated "top-down" with a low-cost anisotropic self-stop etching technique. Notably, t...

Methionine is the main source of methyl groups that are partitioned to synthesize various methylated products including creatine, phosphatidylcholine (PC), and methylated DNA. Whether increased methylation of 1 product can divert methionine from protein synthesis or other methylation products was the aim of this experiment. We used an excess of guanidinoacetate (GAA) to synthesize creatine to c...

In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...