Ab.mncr A 270hlHz frequency syntheuimrIFSK modulator for low-rate WPAN iu implemented. It consumes only 4.9mW adopting current re-using technique, self-DC biasing rcheme, and appropriate divider architecture. The 3'*-urder feedback l ~ p e DSM and the high performance charge pump are deigned for wide loop bandwidth, which enables lo design a low p w r r and low noise frequency syntherirer. The ...

CMOS RF has evolved from a novelty to a necessity with the mergence of all analog and digital functionality into a single chip for standards such as Bluetooth and WLAN/802.11. The stringent performance requirements associated with cellular standards such as GSM, however, has either limited the level of RF transceiver integration, or compelled the use of alternative technologies such as BiCMOS o...

This paper describes the Q enhancement of inductor or resonance circuit based on the controlled CMOS transonductance, which is applicable to either on-chip inductor or off-chip inductor. The proposed circuit configuration of high Q enhancement is evaluated for the RF transmit filter of a LTE mobile comm’s micro base station, with the Q factor of over 3000 and the capacity of 10W. A tunable filt...

As great advancements have been made in CMOS process technology over the past 20 years, RF CMOS circuits operating in the microwave band have rapidly developed from component circuit levels to multiband/multimode transceiver levels. In the next ten years, it is highly likely that the following devices will be realized: (i) versatile transceivers such as those used in software-defined radios (SD...

A design of RF down-conversion Gilbert-Cell, with 65 nm CMOS technology, at a supply voltage of 1.8 V, with a new degenerating structure to improve linearity. This architecture opens the way to more integrated CMOS RF circuits and to achieve a good characteristics in terms of evaluating parameters of RF mixers with a very low power consumption (2.17 mW). At 1.9 GHz RF frequency; obtained result...

Introduction: The enormous growth of wireless and portable applications has led to strong demands for high-performance monolithic low-cost passive components in RF and microwave integrated circuits (ICs). However, some traditional microwave passive components such as transmission lines and filters are difficult to integrate on the same chip with the RF and microwave circuits owing to the high s...

Introduction: The enormous growth of wireless and portable applications has led to strong demands for high-performance monolithic low-cost passive components in RF and microwave integrated circuits (ICs). However, some traditional microwave passive components such as transmission lines and filters are difficult to integrate on the same chip with the RF and microwave circuits owing to the high s...

In the mobile wireless industry, system size and cost are important factors for having a competitive product. Because of this, in the future system-on-chip (SOC) solutions are likely to emerge. For wireless communications products, this means that the power amplifier (PA) needs to be integrated with the rest of the analog and digital circuitry. This thesis has experimentally studied the suitabi...

CMOS dominates digital microelectronics. However, wireless applications require RF circuits at 1-5GHz, and exotic higher frequency applications are on the horizon. Silicon-Germanium (SiGe) is a growing choice for these designs. But is it “the” answer? Some argue that scaled CMOS will handle all tomorrow's RF ICs. Others argue that one-chip SoC solutions will never be the winning strategy for th...

The number of wireless communication links is witnessing tremendous growth and new standards are being introduced at high pace. These standards heavily rely on digital signal processing, making CMOS the first technology of choice. However, RF CMOS circuit development is costly and time consuming due to mask costs and design iterations. This pleads for a Software Defined Radio approach, in which...