The basic active and passive elements for a 50 nm InGaAs-InAlAs-InP HEMT process with pseudomorphic InGaAs channel have been realized. The design and fabrication of 50 nm gate length InP HEMTs, MIM capacitors and thin film resistors have been studied. The integration of the components in a microstrip-based MMIC process has been proven by the successful demonstration of a wideband amplifier.

We investigate strained heteroepitaxial crystal growth in the framework of a simplifying (1+1)-dimensional model by use of offlattice Kinetic Monte Carlo simulations. Our modified LennardJones system displays the so-called Stranski-Krastanov growth mode: initial pseudomorphic growth ends by the sudden appearance of strain induced multilayer islands upon a persisting wetting layer.

The damage and strain induced by irradiation of both relaxed and pseudomorphic Ge,Si,-, films on Si(100) with 100 keV 28Si ions at room temperature have been studied by MeV 4He channeling spectrometry and x-ray double-crystal diffractometry. The ion energy was chosen to confine the major damage to the films. The results are compared with experiments for room temprature Si irradiation of Si( 100...

A new approach is proposed to synthesize a mesoporous single crystal Ga(2)O(3) nanoplate by heating a single crystal nanoplate of GaOOH, which involves an ion exchange between KGaO(2) and CH(3)COOH at room temperature for the formation of GaOOH and pseudomorphic and topotactic phase transformation from GaOOH to Ga(2)O(3).

We report on the absence of strain relaxation mechanism in Al0.6Ga0.4N epilayers grown (0001) AlN substrates for thickness as large 3.5 μm, three-orders magnitude beyond Matthews–Blakeslee critical formation misfit dislocations (MDs). A steady-state compressive stress 3–4 GPa was observed throughout AlGaN growth leading to a lattice bow (a radius curvature 0.5 m−1) thickest sample. Despite mism...

The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level. For the first time, the dynamic large-signal internal physical behavior of a pHEMT is examined using a quasi-two-dimensional physical device model. The model accounts ...