This paper present an extensive review of homogeneously doped Junctionless Cylindrical Gate All Around (JL-CGAA) MOSFET using numerical simulations to look into deep physical insight of the device. The electrical and analog/RF performance has been investigated. The JL-C-GAA FET is more immune to short channel effect than the devices having p-n junctions. It also offers steeper subthreshold slop...

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, includin...

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The double gate junctionless transistor (DG-JLT) has become the most promising device in sub nano-meter regime. DGJLT based circuits have improved performance and simpler fabrication than their inversion mode counterparts. This paper demonstrates design of different analog digital using DGJLT. Amplifiers inverters are basic building block electronic ICs. A MOS amplifier converts variation to so...

In this paper a modified junctionless transistor is proposed. The aim of the novel structure controlling off-current using π-shape silicon window in buried oxide under source and channel regions. changes potential profile region which conduction band energy get away from body Fermi rebuild an electrostatic potential. Beside significant reduced off-current, on current has acceptable value Silico...

In this note, the concept of Vertical Slit Transistor Based Integrated Circuits (VeSTICs) is introduced and its feasibility discussed. VeSTICs paradigm has been conceived in response to the rapidly growing complexity/cost of the traditional bulk-CMOS-based approach and to challenges posed by the nano-scale era. This paradigm is based on strictly regular layouts. The central element of the propo...

In this paper, a two-dimensional analytical model of laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting SiO2 and HfO2 is derived. The illustrates higher drive current better performance against hazardous SCEs HCEs in below 30 nm regime. Parabolic approximation method used here to construct channel potentials ...

The choice of gate metal technology for junctionless transistors needs to have diverse characteristics as metals distinct work functions and hence, they show incompatibility while tailoring threshold the device. In such a scenario, bimetallic stacked can be promising candidate present wide range tunable required nano-regime transistors. This paper explores electronic phenomena occurring at meta...

This paper analyzes the design space stability of negative capacitance double gate junctionless FETs (NCDG JLFET). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, and critical thickness ferroelectric layers giving rise to behavior. The impact technological parameters is investigated in order ensure hysteresis-free operation. ...