Previously, the general practice is to provide Insulated Gate Bipolar Transistors (IGBTs) with a gate characteristic that requires a negative gate drive bias to assure adequate turn-off when a high dv/dt is applied to the IGBT in a half bridge topology. However, providing the negative bias adds gate drive complexity. It also makes it difficult to use high voltage IC drivers because the ICs are ...

In the application of vehicle power supply and distributed power generation, there are strict requirements for the pulse width modulation (PWM) converter regarding power density and reliability. When compared with the conventional insulated gate bipolar transistor (IGBT) module, the Reverse Conducting-Insulated Gate Bipolar Transistor (RC-IGBT) with the same package has a lower thermal resistan...

For high-voltage applications, the series operation of devices is necessary to handle high voltage with limited voltage rating devices. In the case of self turn-off devices, however, the series operation of devices is very difficult. The main problem associated with series-connected devices is how to guarantee the voltage balance among the devices both at the static and the dynamic transient st...

0026-2714/$ see front matter 2009 Published by doi:10.1016/j.microrel.2009.07.055 * Corresponding author. Tel.: +44 (0)20 8331 8660 E-mail address: [email protected] (C. Bailey). Power electronics uses semiconductor technology to convert and control electrical power. Demands for efficient energy management, conversion and conservation, and the increasing take-up of electronics in transport sys...

Figure 1. Basic IGBT subcircuit Introduction You’ve finally tested a version of your design that seems to work well, but you would feel a lot better if you KNEW the circuit would work well with all the devices that the vendor will supply in production. You found a model in a library, but you are not sure what specifications from the data book apply to that model. The following paragraphs will t...

Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy. We propose the application of the bond graph techniques to model modular power semiconductor devices. Furthermore, the IGBT is a ...

A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing density and thus reduce its on-resistance per...