In 80th years the direct evidence of homogeneous film dissociation to domains of various structure was shown by TEM. Before our work starts the images of InGaAsP layers that were grown in unstable region of phase diagram has been obtained by several research groups [13]. It was informed that TEM plane view images of such layers contain fine-scale structure (with period about 10 nm) and coarse-s...

Integrated InP/InGaAsP phased-array 1x16 optical switch is fabricated and characterized for broadband WDM optical packet switching. Wavelength-insensitive operation covering the C-band and penalty-free transmission of 40-Gbps signal are demonstrated.

Heterogeneous integration of InGaAsP microdisk lasers on a silicon platform is demonstrated experimentally using an optofluidic assembly technique. The 200-nm-thick, 5and 10-μm-diameter microdisk lasers are fabricated on InP and then released from the substrates. They are reassembled on a silicon platform using lateral-field optoelectronic tweezers (LOET). The assembled laser with 5-μm diameter...

Electroabsorption modulators (EAMs) based on the quantum confined Stark effect in multiple quantum wells (MQWs) have advantages for high-speed, low drive voltage, and high extinction ratio applications. In this paper, a traveling-wave electrode structure is proposed to achieve high bandwidths with long devices and lower drive voltages at 1.55μm wavelength. An InGaAsP/InGaAsP MQW traveling-wave ...

Optical and structural characterizations were conducted on an InGaAsN quantum well (QW) with large energy bandgap barrier material consisting of InGaAsP (Eg 1⁄4 1:62 eV) grown by metalorganic chemical vapor deposition. A growth pause annealing technique substantially improves both the structural and the optical quality of the QW. With an optimum growth pause of 14 s, surface roughness reduces b...

Temperature dependencies of the threshold current, device slope efficiency, and heterobarrier electron leakage current from the active region of InGaAsP–InP multiquantum-well (MQW) lasers with different profiles of acceptor doping were measured. We demonstrate that the temperature sensitivity of the device characteristics depends on the profile of p-doping, and that the variance in the temperat...

It is known that the Zn doping profile in strained multi-quantumwell (MQW) InGaAsP lasers strongly affects the electro-optical characteristics of these devices and their temperature sensitivity. A systematic investigation of the excitation dependence of the active layer photoluminescence (PL) intensity from compressively strained InGaAsP MQW pin laser material with different Zn doping profiles ...

In this paper, we have proposed an all-optical wavelength triplexer using photonic crystal resonant cavities. The photonic crystal rods is composed of three layers, InP-InGaAsP-InP, the substrate consists of InP with a refractive index of nInP=3.169 and the guiding layer is InGaAsP, with an index of nInGaAsP=3.364. The guiding layer is 0.510μm thick, and it has an InP top cladding of 1.500μm. T...

Integrated InP polarization converters based on half-ridge structure are studied numerically. We demonstrate that the fabrication tolerance of the half-ridge structure can be extended significantly by introducing a slope at the ridge side and optimizing the thickness of the residual InGaAsP layer. High polarization conversion over 90% is achieved with the broad range of the waveguide width from...