Calcium fluoride is a dielectric material with wide bandgap (?12.1 eV) and relatively high constant (?6.8) that forms van der Waals interface two-dimensional (2D) materials, meaning it contains very low amount of defects. Thin calcium films can be synthesized using multiple techniques are scalable to the wafer level, including molecular beam epitaxy, atomic layer deposition, chemical vapor depo...

Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the maximum electric field near the mesa-etched p-n junction edges covered with film of dielectric constant k = 10 was reduced to 2.0 MV/cm from 3.0 MV/c...

1 Introduction Hf-based silicates and aluminates showing good thermal stability [1] and favorable energy-band alignment [2] have been intensively studied as most promising alternative gate dielectrics. Despite a number of efforts to improve the dielectric properties of such high-k thin films, reliability issues such as charge trapping and dielectric wear-out are still matters of research [3, 4]...

Organic-based flexible dielectric films with high permittivity (e) are desirable for future applications of organic thin-film transistors, such as smartcards and radio frequency identification (RFID) tags, that concurrently desire flexible or conformable substrates. Advances in the development of all-polymer field-effect transistors (PFETs) have been particularly significant for their potential...