III–V semiconductors, especially InAs, have much higher electron mobilities than Si and have been considered as promising candidates for n-channel materials for post-Si lowpower CMOS logic applications. Combined with the inherent 3-D structure that enables the gate-all-around (GAA) geometry for superb gate electrostatic control, III–V nanowire (NW) MOSFETs are well positioned to extend the scal...

This work explores homo- and heterojunction tunnel field-effect transistor (TFET)-based NAND NOR logic circuits using 30 nm technology compares their performance in terms of power consumption propagation delay. By implementing homojunction TFET-based circuits, it has been observed that consumes less than the gate since current drawn by PTFET pull-up network is higher. The delay lower due to its...

In this work, we present a gate-all-around (GAA) low-temperature poly-Si nanowire (NW) junctionless device with TiN/Al.

The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically, and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) is proposed and described. The tunneling current is calculated by using a formalism based on the Bardeen’s transfer Hamiltonian, and including ...

This paper explains the performance analysis of Gate-AllAround silicon nanowire with 80nm diameter field effect transistor based CMOS based device utilizing the 45-nm technology. Simulation and analysis of nanowire (NW) CMOS inverter show that there is the reduction of 70% in leakage power and delay minimization of 25% as compared with 180 nm channel length.Gate-All-Aorund (GAA) configuration p...

Methionine is the main source of methyl groups that are partitioned to synthesize various methylated products including creatine, phosphatidylcholine (PC), and methylated DNA. Whether increased methylation of 1 product can divert methionine from protein synthesis or other methylation products was the aim of this experiment. We used an excess of guanidinoacetate (GAA) to synthesize creatine to c...

Compared with a two-dimensional (2D) homogeneous channel, the introduction of 2D/2D homojunction or heterojunction is promising method to improve performance tunnel field-effect transistor (TFET), mainly by controlling tunneling barrier. We simulate 10-nm-Lg double-gated GeSe TFETs and van der Waals (vdW) GeSe/GeTe based on ballistic quasi-static ab initio quantum transport simulation. Two devi...

0167-9317/$ see front matter 2012 Elsevier B.V. A http://dx.doi.org/10.1016/j.mee.2012.07.048 ⇑ Corresponding author. E-mail address: [email protected] (D. Sacch We report on the top-down fabrication of vertically-stacked polysilicon nanowire (NW) gate-all-around (GAA) field-effect-transistors (FET) by means of Inductively Coupled Plasma (ICP) etching and nanostencil lithography. The nan...

Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due ...

Vertically aligned ZnO-ZnS heterojunction nanowire (NW) arrays were synthesized by thermal evaporation in a tube furnace under controlled conditions. Both ZnO and ZnS are of wurtzite structure, and the axial heterojunctions are formed by epitaxial growth of ZnO on ZnS with an orientation relationship of [0001](ZnO)//[0001](ZnS). Vertical ZnS NW arrays have been obtained by selectively etching Z...