We demonstrate multi-emitter Si/GexSi1 x npn heterojunction bipolar transistors (HBT’s) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain 400 regardless of whether t...

In this work, we demonstrate that the incorporation of carbon in the base of a npn Si/SiGe/Si heterojunction bipolar transistor dramatically reduces the outdiffusion of boron from the base under postgrowth implantation and annealing procedures. Without the addition of C, these processes would lead to transistors with vastly degraded transistor characteristics. This reduction in B diffusion, whe...

We present a parallel-in-waveform simulation technique for high frequency heterojunction bipolar transistor (HBT) circuit characterization. On the contrary to the conventional frequency domain analysis, the HBT circuit equations are solved with waveform relaxation and monotone iterative methods in large signal time domain. This approach has been applied to calculate HBT circuit RF output power,...

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A wide-bandwidth automatic gain control (AGC) amplifier IC was developed using a self-aligned selective-epitaxial SiGe heterojunction bipolar transistor (HBT). A transimpedance load circuit was used, and its damping factor was optimized to achieve a wide bandwidth of 32.7 GHz. Capacitor peaking was introduced to the second variable-gain amplifier in order to obtain a wide gain dynamic range of ...

Abstract We present a selective laterally wet etched collector InP/InGaAs/InGaAsP double heterojunction bipolar transistor (DHBT) with a quaternary step graded base collector structure. This device shows a DC current gain of = 70 over a large collector current range, a breakdown voltage of BVCE0 = 10.5 V, and a maximal collector emitter voltage of more than 5.5 V at 105 A/cm2 collector current ...

Silicon-on-insulator technology offers solutions to the higher-performance and lower-power dilemma Digital Systems: New two-antenna handset technology improves CDMA network performance Tx/Rx: Making phase shifters affordable for widespread commercial electronically scanned antenna arrays Mixed Signal: High-speed digital and mixed-signal ICs using advanced indium phosphide heterojunction bipolar...