Nanoscale switchable ferroelectric (Ba0.50Sr0.50)(Ti0.80Sn0.20)O3-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiO x /SiO 2 /Si substrate by chemical solution deposition. X-ray diffraction (XRD) spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin fil...

Switchable polarization makes ferroelectrics a critical component in memories, actuators and electro-optic devices, and potential candidates for nanoelectronics. Although many studies of ferroelectric switching have been undertaken, much remains to be understood about switching in complex domain structures and in devices. In this work, a combination of thin-film epitaxy, macro- and nanoscale pr...

Parallel-plate capacitors based on ferroelectric thin films are considered as high density capacitors and varactors. Due to the small thickness of the ferroelectric films, typically less than 1.0 μm, high electric fields are generated even at relatively low voltages inducing piezoelectric effect associated with electrostriction. This induced piezoelectric effect has negative impact on ferroelec...

This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these ...

Synthesis by the hydrothermal method has various advantages, including low reaction temperature, three-dimensional substrate availability, and automatic polarization alignment during the process. In this review, powder synthesis, the fabrication of piezoelectric thin films, and their applications are introduced. A polycrystalline lead zirconate titanate (PZT) thin film was applied to a micro ul...

We report on nanoscale strain gradients in ferroelectric HoMnO(3) epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, an...

Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated 'creep' motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system's switching properties requires that this creep motion be taken into account. Despite this importance, few...

Related Articles Ferroelectric and electrical characterization of multiferroic BiFeO3 at the single nanoparticle level Appl. Phys. Lett. 99, 252905 (2011) Defect enhanced optic and electro-optic properties of lead zirconate titanate thin films AIP Advances 1, 042144 (2011) Ultrafast switching of ferroelastic nanodomains in bilayered ferroelectric thin films Appl. Phys. Lett. 99, 182906 (2011) P...

Related Articles High-temperature ferroelectric behaviors of poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films with electroactive interlayers J. Appl. Phys. 111, 064506 (2012) The influence of Mn substitution on the local structure of Na0.5Bi0.5TiO3 crystals: Increased ferroelectric ordering and coexisting octahedral tilts J. Appl. Phys. 111, 064109 (2012) The improved polar...

There have been many interests in exploring multiferroic materials with superior ferroelectric and magnetic properties for the purpose of developing multifunctional devices. Fabrication of thin films plays an important role in achieving this purpose, since the multiferroicity can be tuned via strain, dimensionality, and size effect, without varying the chemical composition. Here, we report exot...