Oxygen vacancy (VO) strongly affects the properties of oxides. In this study, we used X-ray diffraction (XRD) to study changes in the VO concentration as a function of the Co-doping level of ZnO. Rietveld refinement yielded a different result from that determined via X-ray photoelectron spectroscopy (XPS), but additional maximum entropy method (MEM) analysis led it to compensate for the differe...

The dc current gain dependence of InGaP/GaAs heterojunction bipolar transistors (HBTs) on subcollector and etch-stop doping is examined. Samples of InGaP/GaAs HBTs having various combinations of subcollector doping and etch-stop doping are grown, and large area (60 m 60 ( ) HBTs are then fabricated for dc characterization. It is found that the dc current gain has a strong dependence on the dopi...

One of 3-D devices to achieve high density arrays was adopted in this study, where source and drain junctions are formed along the silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D...

Incorporation of doping ions in nanocrystals is a strategy for providing nanophases with functions directly related to ion features. At the nanoscale, however, doping can also activate more complex effects mediated by perturbation of the nanophase size and structure. Here, we report a paradigmatic case in which we modify grown-in-glass γ-Ga2 O3 nanophases by nickel or titanium doping of the sta...

In this study, we employed an ultrathin separately doped organic light-emitting diode (OLED) structure to achieve the lowest turn-on voltage, highest luminance efficiency, and highest electroluminescence. In the simulation part, the spectrum intensity of the main emitting layer (EML) tris(8-hydroxy-quinoline) aluminum (Alq3) photoluminescence (PL) and the full width at half maximum (FWHM) of it...

The effects of Li doping in MgH 2 on H-diffusion process are investigated, using first-principles calculations. We have identified two key effects: (1) The concentration of H vacancy in the þ1 charge state ðV þ1 H Þ can increase by several orders of magnitude upon Li doping, which significantly increases the vacancy mediated H diffusion rate. It is caused by the preferred charge states of subst...

We report on in situ doping of InAs nanowires grown by metal-organic vapor-phase epitaxy without any catalyst particles. The effects of various dopant precursors (Si(2)H(6), H(2)S, DETe, CBr(4)) on the nanowire morphology and the axial and radial growth rates are investigated to select dopants that enable control of the conductivity in a broad range and that concomitantly lead to favorable nano...

We calculate the spin correlation function and the magnetic longitudinal and transverse susceptibilities of a two-dimensional antiferromagnet doped with a small concentration of holes, in the t-J model. We find that the motion of holes generates spin fluctuations which add to the quantum fluctuations, the spin correlations decaying with the inverse of the spin distance, while increasing with do...

Delta doping techniques have been investigated to enhance the p-type doping of ZnSe. Tellurium was used as a codopant for improving the nitrogen doping efficiency. The net acceptor concentration (NA2ND) increased to 1.5310 18 cm using single d doping of N and Te ~N1Te!, while it was limited to 8310 cm by d doping of N alone. A promising approach was developed in which three consecutive d-doped ...