The use of ultrabright light-emitting diodes as a potential substitute for conventional excitation light sources in fluorescence microscopy is demonstrated. We integrated ultrabright light-emitting diodes in the filter block of a conventional fluorescence microscope together with a collimating Fresnel lens, a holographic diffuser and emission filters. This setup enabled convenient changes betwe...

In this study, spectroscopic properties of the single-walled boron-nitride nanotube (SWBNNT) –a semiconductor channel in molecular diodes and molecular transistors–have been investigated under field-free and various applied electric fields by first principle methods.Our analysis shows that increasing the electric field in boron-nitride nanotube (BNNT) decreases the Highest Occupied Crystal Orbi...

In this thesis innovative tunnel devices based on new architectures, new fabrication approaches and novel material combinations are fabricated and investigated in detail. In particular, nanowire homoand heterojunction tunnel diodes based on Si and InAs-Si have been demonstrated for the rst time. The gained knowledge and understanding of tunnel diodes is applied to design and fabricate InAs-Si h...

The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically characterized: capacitance, implied de...

We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than -15 V. To decrease the...

KANJ, HOUSSAM. Circuit-Level Modeling of Laser Diodes. (Under the direction of Dr. Michael B. Steer.) In all semiconductor laser diodes the thermal, electrical, and optical characteristics are integrally related. In this work, a new approach to the modeling of laser diodes that integrates electrical, optical and thermal effects is presented. Also, it is demonstrated how physical device models b...

An unequal Wilkinson power divider with adjustable power dividing ratio is proposed. The proposed power divider consists of rectangular defected ground structure (DGS), isolated island in DGS, and varactor diodes. The impedance of the microstrip line greatly increases due to the DGS, and varies because of the varying capacitance of diodes. The measured unequal dividing ratios vary from 1.97–13....

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Background: Estimating dosimetric parameters for small fields under non-reference conditions leads to significant errors if done based on conventional protocols used for large fields in reference conditions. Hence, further correction factors have been introduced to take into account the influence of spectral quality changes when various detectors are used in non-reference conditions at differen...

Effectively controlling quantum mechanical tunneling through an ultrathin dielectric represents a fundamental materials challenge in the quest for high-performance metal-insulatormetal (MIM) diodes. Such diodes are the basis for alternative approaches to conventional thin-fi lm transistor technologies for large-area information displays, [ 1 , 2 ] various types of hot electron transistors, [ 2–...