This paper reports the characterization of a photosensitive benzocyclobutene (BCB), a low dielectric constant spin-on polymer for use as interlayer dielectric in the microelectronics industry. Research work is divided into three main sections. First, BCB thin film characterization was done to investigate the effects of curing conditions on BCB film thickness, dielectric properties, optical prop...

In this letter, a novel integration scheme, for metal–insulator–metal capacitors comprising perovskite-type dielectrics and Cu-based bottom electrodes, has been demonstrated on low-temperature FR4 packaging substrates. Cu oxidation during dielectric deposition and postannealing is completely avoided by a dielectric-first process flow with Ti as oxygen-getter. By using evaporated barium strontiu...

Abstract – In this paper, the effect of applied electric field on the damage due to partial discharges activity into the surroundings dielectrics of a narrow channel encapsulated within the volume of a dielectric material is evaluated using a kinetic model based on Particle in Cell - Monte Carlo Collision (PIC-MCC) model. After application of an electric field across a dielectric material which...

Fundamental limitations to oxide reliability are analyzed in silicon carbide based devices. A barrier height primarily determined by band offsets between metal/SiC and the dielectric, and the electric field in the dielectric results in tunneling current into the dielectric, resulting in its degradation. Since band offsets for SiC to most dielectrics are smaller than those with respect to Si, a ...

Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is pr...

Articles you may be interested in Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors Appl. Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors Appl. Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors Appl. D...

The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve h...

Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures that can provide perfect optical benefits but also bring undesirable degradation of electrical performance. Here we propose a novel approach to design high-...