This paper investigates the use of carbon nanotube field effect transistors (CNFETs) for the design of ternary full adder cells. The proposed circuits have been designed based on the unique properties of CNFETs such as having desired threshold voltages by adjusting diameter of the CNFETs gate nanotubes. The proposed circuits are examined using HSPICE simulator with the standard 32 nm CNFET tech...

Carbon nanotubes are nanocomponents par excellence that offer unique properties to be exploited in next-generation devices. Sensing applications are perhaps the class that has most to gain from single-walled carbon nanotubes (SWNTs); virtually any property of SWNTs (e.g., electronic, electrical, mechanical, and optical) can result or has already resulted in sensor concept demonstrators. The bas...

Single-wall carbon nanotube field-effect transistors (CNFETs) have been shown to behave as Schottky barrier (SB) devices. It is not clear, however, what factors control the SB size. Here we present the first statistical analysis of this issue. We show that a large data set of more than 100 devices can be consistently accounted by a model that relates the on-current of a CNFET to a tunneling bar...

The present paper treats the Carbon Nanotube Field Effect Transistors (CNFETs) in terms of new development as a possible future basic element for beyond CMOS technology used in ultra high scale integration ULSI. The CNFET is studied both in physical as well as technological point of views aiming a further understanding of the limitations to high integration density. The different types of carbo...

The carbon nanotube field-effect transistor (CNFET) has attracted a great deal of interest due to predictions of its superior performance over that of ultimately-scaled silicon MOSFETs [1, 2]. While significant progress has been made in predicting its behaviour, simulations have primarily focused on azimuthally invariant structures, such as the cylindrically-gated CNFET [2, 3]. While this may b...

The SRAM which functions as the cache for system-on-chip is vital in the electronic industry. Carbon Nanotube Field Effect Transistor (CNFET) is used for high performance, high stability and low-power circuit designs as an alternative material to silicon in recent years. Therefore Design of SRAM Cell based on CNTFET is important for Low-power cache memory. In cells, the bit-lines are the most p...

In this paper, a full adder cell based on majority function using Carbon-Nanotube Field-Effect Transistor (CNFET) technology is presented. CNFETs possess considerable features that lead to their wide usage in digital circuits design. For the design of the cell input capacitors and inverters are used. These kinds of design method cause a high degree of regularity and simplicity. The proposed des...

Motivations of CMOS technology scaling are higher speed of operation, benefit of integration density and lower power dissipation. CMOS technology has crossed many hurdles over the past four decades. The aggressive technology scaling is causing device parameter variations, which is more severe than earlier. This paper carries out variability analysis of various popular exclusive-OR circuits at t...