The enormous demands for metal implant have given rise to a search for cheap material with good bio-tolerability and resistance to corrosion. Although stainless steel has these properties and is widely used for this purpose, its long term application is still a concern. The corrosion resistance of stainless steel depends on the passive layer. Herein, chemical surface treatment, including passiv...

This chapter gives an overview of the theoretical bases of surface passivation and antireflection coating and describes the methods and equipment used to characterize the layers created in this work. While surface passivation is quantified by the effective surface recombination velocity Seff , this parameter cannot be measured directly. Instead, the lifetime measurements by QSSPC and ”PCD carri...

Treatment with ammonium sulfide [(NH4)2Sx] solutions is used to produce model passivated InAs (001) surfaces with well-defined chemical and electronic properties. The passivation effectively removes oxides and contaminants with minimal surface etching, and creates a covalently bonded sulfur layer with good short-term stability in ambient air and a variety of aqueous solutions, as characterized ...

We investigate the edge states of quantum spin-Hall phase Bi(111) bilayer nano-ribbons (BNRs) and their spin-rectifying effect using first-principles calculations and a non-equilibrium transport method. As low-dimensional materials, BNRs have tunable electronic properties, which are not only dependent on the edge shape, chemical passivation, or external electric fields but also governed by geom...

UNLABELLED Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PEDOT PSS) hybrid solar cell, enabling an im...

In silicon heterojunction solar cells, the passivation of the crystalline silicon wafer surfaces and fabrication of emitter and back surface field are all performed by intrinsic and doped amorphous silicon thin layers, usually deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ diagnostics during PECVD, it is found that the passivation quality of such layers directl...

Surface passivation and bulk carrier lifetime of silicon nanowires (SiNWs) are essential for their application in solar cell devices. The effective minority carrier lifetime of a semiconductor material is influenced by both its surface passivation and bulk carrier lifetime. We found that the effective carrier lifetime of SiNWs passivated with aluminum oxide (Al2O3) was significantly influenced ...

The influence of surface chemical treatments and of deposition of a SiO2 surface passivation layer on carrier distributions and mobility in AlxGa12xN/GaN heterostructure field-effect-transistor epitaxial layer structures is investigated. Surface chemical treatments are found to exert little influence on carrier distribution and mobility. Deposition of a SiO2 surface passivation layer is found t...

We present a first-principles density functional theory study predicting the relative thermodynamic stability of ferroelectric lithium niobate (LiNbO3) (0001) surfaces of different stoichiometry. We predict that the equilibrium stoichiometries are different for the positively and negatively polarized LiNbO3 surfaces under the same conditions. Based on the modern theory of polarization, we demon...

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely e...