The snail’s specie, Oncomelania quadrasi, is found abundantly in fresh water fish ponds of Punjab. It is an intermediate carrier / host of various digenetic trematode parasites which causes many serious fish diseases in aquaculture ponds. The purpose of this study was targeted for controlling these snails in aquatic environments through chemical control strategies using copper sulfate as an era...

CHOQIJETTE, KD., CANEAII, c.. and F I O R ~ Z , L.T.: ‘Low threshold buried heterostructure vertical cavity surfxe-emitting laser’. Conf. Lascrs and Electro-optics, Tcch. Dig. Scr., 1993, Vol. 11, pp. 136138 YOO, n.-s., CHU, KY., PARK, II.-H., LIE. H.G., and LEE, J . : ‘Transversc mode charactetistics of vertical-cavity surface-emitting lasers buried in aniorphous GaAs antiguide layer’, IEEE J ...

of buried objects. It is designed to detect, locate and retrieve buried objects. The system is equipped with a hydraulic robot, laser range finder and a subsurface sensor. First, subsurface sensing is used to detect and locate buried objects. If an object can be reached with one dig, the excavator retrieves it directly. Otherwise a layer of soil above the object is removed and another subsurfac...

We demonstrate quantitative, chemically specific imaging of buried nanostructures, including oxidation and diffusion reactions at buried interfaces, using nondestructive tabletop extreme ultraviolet (EUV) coherent diffractive imaging (CDI). Copper nanostructures inlaid in SiO2 are coated with 100 nm of aluminum, which is opaque to visible light and thick enough that neither visible microscopy n...

PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enh...

The effect of surface roughness scattering on electron transport properties in extremely thin silicon-on-insulator inversion layers is carefully analyzed. It is shown that if the silicon layer is thin enough ~thinner than 10 nm! the presence of the buried interface plays a very important role, both by modifying the surface roughness scattering rate due to the gate interface, and by itself provi...

A self-aligned vertical Bipolar Charge Plasma Transistor (V-BCPT) with a buried metal layer between undoped silicon and buried oxide of the silicon-on-insulator substrate, is reported in this paper. Using two-dimensional device simulation, the electrical performance of the proposed device is evaluated in detail. Our simulation results demonstrate that the V-BCPT not only has very high current g...