نتایج جستجو برای: atmospheric pressure chemical vapor deposition
تعداد نتایج: 919037 فیلتر نتایج به سال:
While gas discharges under atmospheric pressure occur as filamentary discharges, most studies on plasma polymerization, or plasma Chemical Vapour Deposition (CVD), were carried out in low-pressure (low temperature, non-equilibrium) plasma. However, it is reasonable to assume that the fundamentals of plasma polymerization found by low-pressure discharge apply to the gas phase in the filamentary ...
Vapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor Deposition
An original and easy route to produce mono-, biand tri-layer graphene is proposed using the chemical vapor deposition technique. The synthesis is carried out at atmospheric pressure using liquid precursors, copper as catalyst, and a single gas injection line consisting of a very diluted mixture of H2 in Argon (H2: 5%). Two different alcohols are investigated as possible sources of carbon: 2-phe...
Like natural diamonds, synthetic diamonds can be produced in a variety of grades, depending on growth conditions. High growth rates can be realized with chemical vapor deposition, but the diamond produced is often not clear because of nitrogen deposits that render the crystals absorptive over the infrared-toultraviolet spectrum, resulting in crystals that appear gray or brown. To reduce absorpt...
Vapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor Deposition
Atomic layer doping of phosphorus (P) and arsenic (As) into Si was performed using the vapor phase doping (VPD) technique. For increasing deposition time and precursor gas flow rate, the P and As doses tend to saturate at about 0.8 and 1.0 monolayer of Si, respectively. Therefore, these processes are self-limited in both cases. When a Si cap layer is grown on the P-covered Si(001), high P conce...
nanoporous graphene which is used as nanosorbent was synthesized by chemical vapor deposition method via porous zinc oxide nanocatalyst. the reaction was carried out using methane as the carbon source and hydrogen as the carrier gas in a ratio of 4:1 at the temperature ranging 900-1050°c for 2-50 min. the product was characterized by scanning electron microscopy, transmission electron microscop...
Room-temperature (RT) pulsed operation of blue (420 nm) nitride-based multiquantum-well laser diodes grown on a-plane and c-plane sapphire substrates has been demonstrated. Structures investigated include etched and cleaved facets as well as doped and undoped quantum wells. A combination of atmospheric and low-pressure metal organic chemical vapor deposition using a modified two-flow horizontal...
We present laser-doped interdigitated back contact (IBC) solar cells with efficiencies of 23% on an area 244 cm2 metallized by a screen-printed silver paste. Local laser doping is especially suited for processing IBC where multitude pn-junctions and base contacts lay side side. The one-sided deposition boron-doped precursor layers atmospheric pressure chemical vapor (APCVD) cost-effective metho...
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