This Thesis details the design, fabrication and characterization of organic semiconductor field effect transistors with silicon oxide-nitride-oxide-semiconductor (SONOS) gates for use in spiking analog neural circuits. The results are divided into two main sections. First, the SONOS structures, parallel plate capacitors and field effect transistors, were designed, fabricated and characterized. ...

The paper will briefly review and discuss results of our investigations on the atomic correlations in amorphous Zn-Sb, GaSb, GaSb-Ge and Al-Ge alloys. These semiconductor alloys were prepared by solid state reactions in the course of heating the quenched highpressure phases. Structure of the final products was studied by neutron diffraction for the Al-Ge, GaSb and GaSb-Ge alloys and by transmis...

In this paper, we report on the electrical properties of metal–oxide–semiconductor (MOS) capacitors containing a well-confined 8 nm-thick SiGe amorphous layer (a-SiGe) embedded in a SiO2 matrix grown by RF magnetron sputtering at a low temperature (350 ◦C). Capacitance–voltage measurements show that the introduction of the SiGe layer leads to a significant enhancement of the charge trapping cap...

We report on the pressure-induced phase transition in a model of paracrystalline silicon ~amorphous silicon with a crystalline grain! using an ab initio constant pressure simulation technique. The paracrystalline model transforms into a high-density amorphous phase at 16 GPa with a discontinuous volume change of ;24%. The transformation of the crystalline grain begins at the boundary and procee...

Biaxially oriented CaF2 films have been created by first using an oblique incidence vapor flux to deposit CaF2 onto an amorphous surface to form vertically aligned nanorods which served as seeds to grow a more continuous CaF2 capping layer under a subsequent normal incidence flux deposition. The entire film possesses a unique {111}/121S biaxial texture as shown by X-ray pole figure analysis and...