A new type of nonlinear analog transistor networks has recently been proposed for “turbo” decoding of error correcting codes. However, the influence of various nonidealities on the performance of such analog decoders is not yet well understood. The paper addresses the performance degradation due to transistor mismatch. Some analytical results are derived that allow to compare the accuracy of an...

|The name "charge injection" describes the operation of a generic class of electronic and optoelectronic multiterminal semiconductor devices, based on the real space transfer of hot carriers over a potential barrier into adjacent and separately contacted layers. Charge injection devices enable the implementation of compact optoelectronic gates endowed with a powerful logic functionality. Keywor...

A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky Collector Bipolar Transistor (SCBT) in Silicon-On-Insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current...

This communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of drop-cast though convenient was unable to produce replicable transistor device due to its inherent inability in controlling the volume of liquid being drop-cast. Hence, this method of electros...

A novel reconfigurable hybrid single electron transistor/MOSFET (SETMOS) circuit architecture, namely, reconfigurable pseudo-NMOS-like logic is proposed. Based on the hybrid SETMOS inverter/buffer circuit cell, reconfigurable pseudo-NMOS-like logics that can work normally at room temperature are constructed. This kind of reconfigurable logic can implement up to 2n sorts of functions at n inputs...

As a kind of efficient electrostatic protection device, SCR has been extensively used in on-chip discharge for its strong current ability and favorable internal radiating heat characteristic [1-7] . But there are low holding voltage easy latch up happening two restrictions. A novel high-holding ESD device based on SiGe is proposed this paper. By introducing Ge composition the P + region N-well ...

In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...

In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...

Abstract In this paper, three-dimensional technology computer aided design simulations are used to show that the electron concentration, current density, and electric field distribution from interface at lateral channels top channel centre of silicon wire, in nanowire nanosheet structures, practically same. This characteristic makes it possible consider total width for these structures is equal...

This paper investigates the simulation and performance of Tunnel field effect transistor (TFET) with a nanocavity in it, which can be used for bio sensing application. The entire is done using tool Silvaco Atlas TCAD. mainly aims comparing different parameters few biomolecules has dielectric constant values, namely Streptavidin, Biotin, APTES, Cellulose DNA. device structure here consists near ...