s of the Invited Presentations Vienna University of Technology April 10 and 11, 2003 Society for Microelectronics Vienna, 2003 Society for Microelectronics c/o Institute of Industrial Electronics and Material Science Vienna University of Technology Gusshausstraße 27–29/366 A-1040 Vienna, Austria

This paper presents new optical measurement method for evaluating the defects on a silicon wafer surface quantitatively by detecting the intensity distribution, “ laser scattered defect pattern ( LSDP )“, corresponding to the superposition of scattered light from a defect and reflected light from a surface. In order to verify a feasibility to detect “crystal originated particles ( COPs )” and t...

Today, the central role of industrial robots in automation in general and in material handling in particular is crystal clear. Based on the current status of Photovoltaics and by focusing on lightweight material handling, PV industry has turned into a potential candidate for introducing a fresh “pick and place” robot technology. Thus, to examine the industry needs in this regard, firstly the be...

We developed and characterized a rapid, sensitive and integrated optical vapor sensor array for micro-gas chromatography (μGC) applications. The sensor is based on the Fabry-Pérot (FP) interferometer formed by a micrometre-thin vapor-sensitive polymer layer coated on a silicon wafer. The thickness and the refractive index of the polymer vary in response to the vapor analyte, resulting in a chan...

This paper presents a method to provide electrical connection to a 2D capacitive micromachined ultrasonic transducer (CMUT) array. The interconnects are processed after the CMUTs are fabricated on the front side of a silicon wafer. Connections to array elements are made from the back side of the substrate via highly conductive silicon pillars that result from a deep reactive ion etching (DRIE) ...

Staffs of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, have developed a new generation of prototype Single-Crystal CD (Critical Dimension) Reference (SCCDRM) Materials with the designation RM 8111. Their intended use is calibrating metrology instruments that are used in semiconductor manufacturing. Each referenc...

Silicon nitride is a material compatible with CMOS processes and offers several advantages, such as wide transparent window, large forbidden band gap, negligible two-photon absorption, excellent nonlinear properties, smaller thermo-optic coefficient than silicon. Therefore, it has received significant attention in the field of silicon photonics recent years. The preparation waveguides using low...

Direct writing of multi-depth microchannel branching networks into a silicon wafer with femtosecond pulses at 200 kHz is reported. The silicon wafer with the microchannels is used as the mold for rapid prototyping of microchannels on polydimethylsiloxane. The branching network is designed to serve as a gas exchanger for use in artificial lungs and bifurcates according to Murray’s law. In the de...

The characterisation of 85 rear-line-contacted silicon concentrator solar cells on one single wafer requires a fast, automated measurement system. In this paper an easy to use needle array measurement system is presented, which allows an automated sequential measurement of dark and light IV curves of all cells on one wafer. For acquiring IV curves under high illumination levels (up to 500 suns)...

n this study, two silicon wafer substrates were coated with vertially aligned multiwalled carbon nanotubes (MWCNT) “forests” nd were used for pool boiling studies. The MWCNT forests (9 nd 25 m in height) were synthesized on the silicon wafer subtrates using chemical vapor deposition (CVD) process. The subtrates were clamped on a cylindrical copper block with embeded cartridge heaters. The heat ...