This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technology. The relative performance of microwave power transistor technology from 1 GHz to 60 GHz is reviewed. The fundamental technological drivers in the design of microwave compound semiconductor power transistors are discussed as the basis for developing optimum designs. A new high yield power GaAs ...

in this article, we suggested a novel design of polarization splitter based on coupler waveguide on inp substrate at 1.55mm wavelength. photonic crystal structure is consisted of two dimensional (2d) air holes embedded in inp/ingaasp material with an effective refractive index of 3.2634 which is arranged in a hexagonal lattice. the photonic band gap (pbg) of this structure is determined using t...

This study advocates for ‘materials-centered’ accounts in the history of technology, and presents such an analysis for the early history of microelectronics. Innovations in semiconductor crystal production were central to the emergence of solid state electronics and the dynamics of the early semiconductor industry. In the late 1940s and early 1950s, the Bell Telephone Laboratories developed nov...

In this paper we report, to the best of our knowledge, the first experimental realization of distributed feedback (DFB) semiconductor lasers based on reconstruction-equivalent-chirp (REC) technology. Lasers with different lasing wavelengths are achieved simultaneously on one chip, which shows a potential for the REC technology in combination with the photonic integrated circuits (PIC) technolog...

Abstarct The work presents the newly deploying technology in semiconductor industry called silicon on insulator (SOI). Its two technology partially and fully depleted SOI and describe how these are different from conventional bulk MOS technology, advantages over bulk technology and floating body effect of PD/FD SOI technology, factors effecting floating body such as kink effects in PD SOI, para...

From the history of power electronics, the technology improvements in power semiconductors have been the driving force for this problem. Moving from bipolar to MOSFET technology has greatly increased switching speed. For current semiconductor technology, very fast devices are available. For the power MOSFET used in front end application, they could be switched with mega hertz frequency range. T...

The electronics industry is experiencing a renaissance in semiconductor package technology. A growing number of innovative 3D package assembly methodologies have evolved to enable the electronics industry to maximize their products functionality. By integrating multiple die elements within a single package outline, product boards can be made significantly smaller than their forerunners and the ...

The progressive scaling of complementary metal oxide semiconductor (CMOS) transistors drives the success of the global semiconductor industry. Detailed knowledge of transistor behaviour is necessary to overcome the many fundamental challenges faced by chip and systems designers. Grid technology has enabled the unavoidable statistical variations introduced by scaling to be examined in unpreceden...

We recently integrated all major functions – RF transmitter, RF receiver, and arbitrary pulse sequencer – of the conventionally bulky NMR spectrometer electronics into a fingertip-sized silicon chip and demonstrated various multidimensional NMR spectroscopy experiments with them, using various bioand organic molecules. We envision that the size and cost economy of such integrated spectrometer c...

Bit swapping linear feedback shift register (BS-LFSR) is employed in a conventional linear feedback shirt register (LFSR) to reduce its power dissipation and enhance its performance. In this paper, an enhanced BS-LFSR for low power application is proposed. To achieve low power dissipation, the proposed BS-LFSR introduced the stacking technique to reduce leakage current. In addition, three diffe...