We investigate the impact of threading dislocations with an edge component ($a$ or $a+c$ type) on carrier recombination and diffusion in $\mathrm{Ga}\mathrm{N}$(0001) layers close to surface as well bulk. To this end, we utilize cathodoluminescence imaging top a layer deeply buried (In,$\mathrm{Ga}$)N quantum well. Varying acceleration voltage primary electrons comparing signal from enables us ...