Single-crystal, Cu-doped In x Ga1 - x N nanowires were grown on GaN/Al2O3 substrates via a vapor-liquid-solid (VLS) mechanism using Ni/Au bi-catalysts. The typical diameter of the Cu:In x Ga1 - x N nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers. The as-grown nanowires exhibited diamagnetism. After annealing, the nanowires exhibited ferromagnetism with saturation ma...

A diode with Sb-doped p-type ZnO, MgZnO/ZnO/MgZnO double heterostructure, and undoped n-type ZnO layers was grown on c-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. Hall effect measurement showed that the top p-type Sb-doped ZnO layer has a hole concentration of 1 10cm . Mesa geometry light emitting diodes were fabricated with Au/Ni and Au/Ti Ohmic contacts on top of the p...

Dielectric ageing behaviors of lead-based relavor ferroelectric ceramics, which may affect their application in multilayer ceramic capacitors (MLCs), have been an important research problem for many years. In this paper, the effects of annealing on ageing properties of the PMN-O.1PT system, respectively doped with Fe, CO and Ni ions and annealed in different atmospheres (air and Nz-Hz) after si...

The key properties of a successful cathode material, such as the structural stability during delithiation, the battery voltage, and the Li mobility, were investigated for Al-doped Li–Mn–Ni oxide structures, using density-functional theory and the nudged-elastic band method. The rhombohedral layered structure of LiMn0.5Ni0.5O2 with zigzag and flower arrangements of transition metal atoms as well...

Ni-doped chromite anodes were integrated into electrolyte-supported cells (ESC) with 5×5 cm2 size and investigated in fuel cell mode H2/H2O gas. Both a stoichiometric nominally A-site deficient anode material showed promising performance at 860 °C approaching the ones of state-of-the-art Ni/Gd-doped ceria (CGO) anodes. While difference polarization resistance was small, an increased ohmic perov...

p-type Sb-doped ZnO (ZnO:Sb)/n-type Ga-doped ZnO (ZnO:Ga) junctions were grown on c-plane sapphire substrates using plasma-assisted molecular-beam epitaxy. Mesa geometry light emitting diodes (LEDs) were fabricated using standard photolithography and lift-off process, with ohmic contacts achieved using Au/Ni and Au/Ti for top ZnO:Sb and bottom ZnO:Ga layers, respectively. Rectifying current–vol...

Results of density-functional calculations for isolated transition metal (TM = V, Cr, Mn, Fe, Co, Ni on cation sites) doped GaN demonstrate a novel magnetic metastability in dilute magnetic semiconductors. In addition to the expected high spin ground states (4muB/Mn and 5muB/Fe), there are also metastable low spin states (0muB/Mn and 1muB/Fe)--a phenomenon that can be explained in simple terms ...

Metallic Ni nanoparticles wrapped with an N-doped carbon shell as a stable catalyst for the electrochemical reduction of NO to NH 3 high efficiency is described.

Abstract N-, Ni-, and graphene oxide (GO)-doped carbon xerogel were synthesized from melamine-resorcinol-formaldehyde gels by drying followed pyrolysis at 950 °C. The mass of nickel GO in xerogel, formed after carbonization was 5 1%, respectively. obtained product characterized scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), X-ray diffraction (XRD) Fourier transform in...

Investigation of new calculate depends on the controlled optical properties of nanomaterials. Understanding the growth mechanism and growth parameters of nanostructured materials is essential. ZnO is one of the most important semiconductor materials for its semiconducting characteristics. In the present paper, we investigated a new model by theoretical methods; it is based on correlation from t...