The paper describes an improved direct inductive sensor to microcontroller interface by incorporating external MOSFET transistors. In such a way, the measured discharging time interval can be increased (through the discharging time constant) which results in increased resolution for a given time base. The experimental results show that the resolution of the measurements can be significantly imp...

Though the importance of CAD increases, the analog circuit design is still mostly done by experience. It is known that this is because of insufficient model quality, or quality of extracted parameter values. We have developed a new MOSFET model based on the drift-diffusion approximation. By comparing a conventional piece-wise model with our precise model, critical shortage of the conventional m...

A current sensing device, namely Hall Effect MOSFET (HEMOS) is proposed. It is experimentally shown that the HEMOS enables a non-contacting, and non-disturbing current measurement, which can be used for IDDQ testing of internal circuit blocks. The HEMOS can be manufactured and integrated in a VLSI with the conventional CMOS process. The HEMOS is also helpful to establish the low standby current...

A new and simple bit transition detection technique for non-return-to-zero (NRZ) signals is described. The bit transition detector uses MOSFET transistor’s nonlinearity to extract return-to-zero (RZ) signals from NRZ signals. The resulting RZ signals can be used for injection-locking an oscillator, performing clock synchronization. A 10Gbps injection-locked clock and data recovery (CDR) circuit...

To overcome the conduction and switching losses generated by earlier converter designs, we propose a new genetic algorithm based Cuk converter design which increases the performance of photovoltaic system. The objective is to produce high-efficiency, voltage and current of a PV system with help of GA Controller. The requirement of continuous and controlled flow of voltage has met with the suppo...

In this work, we present for the first time, a highly scalable general high voltage MOSFET model, which can be used for any high voltage MOSFET with extended drift region. This model includes physical effects like the quasi-saturation, impact-ionization and self-heating, and a new general model for drift resistance. The model is validated on the measured characteristics of two widely used high ...

A simple, general and realistic MOSFET model is introduced. The model can express the current characteristics of short-channel MOSFETs at least down to 0 . 2 5 ~ channel-length, GaAs FET, and resistance inserted MOSFETs. The model evaluation time is about 1/3 of the evaluation time of the SPICE3 MOS LEVEL3 model. The model parameter extraction is done by solving single variable equations and th...

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

A highly linear 600 MHz centre frequency, 500 MHz bandwidth 6 order Butterworth bandpass filter using a LeapFrog Gm-C topology is designed. Fully differential inverter based Operational Transconductance Amplifier (OTA) with common-mode feedback (CMFB) and common-mode feed forward (CMFF) circuit is used in the design. Cadence tool has been used on IHP SiGe BiCMOS 0.25 μm node. The filter consume...

Carrier dynamics in a MOSFET channel under fast time-varying gate input is included in the modeling for circuit simulation and implemented in SPICE3f5 at only 7% increased computational runtime cost. Correct reproduction of transient drain currents as well as harmonic-distortion characteristics are verified. While the carrier dynamics under low-frequency operation is mostly governed by the carr...