A pulsing circuit is designed and constructed capable of raising up to +6.7kV between plates of a small (~50cm side length) spark chamber. The device is triggered by the ~2V output of a cosmic ray detection device, and its overall gain of ~1:3000 is achieved by a sequence of amplifiers and fast switching devices – namely a Bipolar Junction Transistor (BJT), Insulated Gate Bipolar Transistor (IG...

As the core device of power electronic equipment, IGBT (Insulated Gate Bipolar Transistor) is related to reliability system, so its online health monitoring particularly important. Due large amount data and high sampling rate for monitoring, transmission has become a major problem, method effectively reconstructing original signal one current research hotspots. Based on theory compressed sensin...

The purpose of this research is to analyze the efficiency an induction motor controller, using space vector pulse width modulation (SVPWM) in open loop. With a constant torque 1.5 Newton per meter. It carried out by applying mathematical model, formulas for commutation times and vectors Simulink taking into account maximum minimum values operation SVPWM method generate trigger signal Insulated ...

The cumulative inverter losses and power consumption of a silicon insulated gate bipolar transistor (Si IGBT) three types carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were evaluated on an electric motor test bench under worldwide harmonized light vehicles cycle (WLTC). SiC MOSFETs showed higher performance than Si IGBT regardless the type vehicles. In case driving in...

This paper presents a detailed study of the non-uniform bipolar conduction phenomenon in single finger NMOS transistors and analyses its implications for deep submicron ESD design. It is shown that the uniformity of lateral bipolar triggering is severely degraded with device width (W) in advanced technologies with silicided diffusions and low resistance substrates, and that this effect can only...

The availability of Silicon Germanium (SiGe) Heterojunction Bipolar Tkansistor (HBT) devices has opened a door for GHz Field Programmable Gate Arrays (FPGAs).ls2 The integration of high-speed SiGe HBTs and low-power CMOS gives a significant speed advantage t o SiGe FPGAs over CMOS FPGAs. In the past, high static power consump tion discouraged the pursuit of bipolar FPGAs from being scaled up si...

Voltage Source Converter (VSC) based HVDC is the most recent HVDC technology with extruded DC cables in small and medium power transmission. VSC-HVDC converters include Insulated Gate Bipolar Transistors (IGBT’S) and operated with high frequency Pulse Width Modulation (PWM) in order to get high speed control of both active and reactive power. With VSC-HVDC there is an addition degree of freedom...

This paper carves out the design of unity power factor controller for three phase variable speed induction motor drive. SPWM technique is used to improve the power factor of the system to unity and hysteresis controller is used for speed control of the drive. These control techniques lead to a unity power factor seen by the ac supply and minimize the power loss, audible noise, and motor torque ...

Failure precursors indicate changes in a measured variable that can be associated with impending failure. By identifying precursors to failure and by monitoring them, system failures can be predicted and actions can be taken to mitigate their effects. In this study, three potential failure precursor candidates, threshold voltage, transconductance, and collector-emitter ON voltage, are evaluated...

Identification of fault current during the operation of a power semiconductor switch and activation of suitable remedial actions are important for reliable operation of power converters. A short circuit is a basic and severe fault situation in a circuit structure, such as voltage-source converters. This paper presents a new active protection circuit for fast and precise clamping and safe shutdo...