With an aim of ultra-low power operation, membranetype distributed-feedback (DFB) lasers consisting of wirelike active regions are realized with an InP-based high index-contrast waveguide by using benzocyclobutene (BCB) as well as direct boding on a silicon-on-insulator (SOI) substrate. Lateral current injection (LCI) type lasers on a semi-insulating (SI) InP substrate are also presented. Keywo...

Colloidal Group 13–Group 15 semiconductor nanocrystals (III–V NCs) have been the subject of intensive studies during the last two decades because of rich phenomena associated with quantum confinement. However, studies of III–V NCs are restricted owing to synthetic difficulties. As a consequence of the attractive applications as luminescence probes for bioimaging and as photovoltaic devices, InP...

To provide the maximum possible cooling rate for the Recycler Electron Cooling (REC) [1], the cooling section has to be immersed into a high-quality longitudinal magnetic field. Namely, the solenoidal field of 50150 G should have an integral of the transverse component below 1 G⋅cm over the whole 20-m cooling section [2]. The transverse field components are measured by a dedicated compassbased ...

Président François Forest, Professeur des universités, IES – Université de Montpellier 2 Rapporteur Eric Labouré, Professeur des universités, LGEP – Université de Paris SUD 11 Rapporteur Jean-Luc Schanen, Professeur des universités, G2ELab – Grenoble INP Examinateur Ambroise Schellmanns, Maître de conférences, LMP – Université de Tours Examinateur Christian Martin, Maître de conférences, Ampère...

This paper presents a compact driver module for InP MachZehnder modulator (MZM). The size of the driver module is 14mm × 8mm × 2.8mm. We reduce the size of this driver module by integrating two channels for the driver IC, which doesn’t require any external bias tee, and by making the driver package small. With this driver module and InP MZM module mounted on evaluation board, we obtained a well...

InP single crystals are used to the growth of three-component epitaxial layers and superlattices. Triple crystal X-ray diffractometry and reflectometry have been used to determine defects in InP epi-ready wafers caused by the mechanical treatment. Reciprocal space maps around 400 lattice points were separately made for mechanically polished wafers before and after etching treatment. The lattice...

Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based y...

In this article, we suggested a novel design of polarization splitter based on coupler waveguide on InP substrate at 1.55m wavelength. Photonic crystal structure is consisted of two dimensional (2D) air holes embedded in InP/InGaAsP material with an effective refractive index of 3.2634 which is arranged in a hexagonal lattice. The photonic band gap (PBG) of this structure is determined using t...

The dielectric functions of InP, IIla.53 Gao.47 As, and 1110.75 Gao.2S Aso.s P 0.5 epitaxial layers have been measured using a polarization-modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x-ray photoelectron spectroscopy measurements. These reference data have been used to inves...