Electron-impact total ionization cross sections of some silicon and germanium compounds have been calculated by applying a new theoretical model that has been found to be reliable for a wide range of molecules. The new theory, the binary-encounter-Bethe (BEB) model, combines the binary-encounter theory and the Bethe theory for electron-impact ionization, and uses simple theoretical molecular or...

Declaration This thesis is a presentation of my original research work. Wherever contributions of others are involved, every effort is made to indicate this clearly, with due reference to the literature, and acknowledgement of collaborative research and discussions.Abstract Currently, the International Technology Roadmap for Semiconductors (ITRS) is targeting the 22nm technology node in accorda...

Using Messbauer spectroscopy on 119 Sn impurity atoms, it was demonstrated that in amorphous (GeTe) x (Sb 2 Te 3 ) films (where x=0.5, 1, 2, 3) tin atoms replace of tetravalent germanium, which forms a tetrahedral system chemical bonds with its local environment. In crystalline films, replaces divalent six-coordinated germanium positions 4b the NaCl-type crystal lattice. Keywords: phase memory,...

Correlations among interface properties and chemical bonding characteristics in HfO 2 /GeO x N y /Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO 2 atomic layer deposition (ALD). Ultra thin (~1.1 nm), thermally stable and aqueous etch-resistant GeO x N y interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to st...