To know the electrical properties of any materials is very important for practical application of that material. In this paper I have tried to find out the proper electrical properties of Indium doped Alumina (Al2O3) for practical application of this Alumina. For this purpose all thin films are deposited on glass substrate by electron beam evaporation technique at a pressure of about 1.5 x 10-6...

Revelation of emerging exotic states of topological insulators (TIs) for future quantum computing applications relies on breaking time-reversal symmetry and opening a surface energy gap. Here, we report on the transport response of Bi2Te3 TI thin films in the presence of varying Cr dopants. By tracking the magnetoconductance (MC) in a low doping regime we observed a progressive crossover from w...

We argue that in cuprate physics there are two types, hole content per CuO2 plane (Ppl) and the corresponding hole content per unit volume (P3D), of holedoping concentrations for addressing physical properties that are two-dimensional (2D) and three-dimensional (3D) in nature, respectively. We find that superconducting transition temperature (Tc) varies systematically with P3D as a superconduct...

Doping limits in semiconductors are discussed in terms of the amphoteric defect model (ADM). It is shown that the maximum free electron or hole concentration that can be achieved by doping is an intrinsic property of a given semiconductor and is fully determined by the location of the semiconductor band edges with respect to a common energy reference, the Fermi level stabilization energy. The A...

We demonstrated a novel white electrophosphorescent organic light emitting diodes (PHOLEDs), which structure was ITO/NPB (35 nm)/MCP (5 nm)/Firpic: MCP 10 wt% (15 nm)/ Ir (MDQ)2(acac): TPBI X wt% (2 nm)/Firpic:TPBI 10 wt% (10 nm)/TPBI (40 nm)/LiF (1 nm)/Al (100 nm). The luminescent properties were studied by inserting different doping concentration of the red emitting layer (Ir(MDQ)2(acac):TPBI...

Air-stable n-doping of carbon nanotubes is presented by utilizing SiN(x) thin films deposited by plasma-enhanced chemical vapor deposition. The fixed positive charges in SiN(x), arising from (+)Si ≡ N3 dangling bonds induce strong field-effect doping of underlying nanotubes. Specifically, an electron doping density of ∼ 10(20) cm(-3) is estimated from capacitance voltage measurements of the fix...

A radial p-n junction solar cell based on vertically free-standing silicon nanowire (SiNW) array is realized using a novel low-temperature and shallow phosphorus doping technique. The SiNW arrays with excellent light trapping property were fabricated by metal-assisted chemical etching technique. The shallow phosphorus doping process was carried out in a hot wire chemical vapor disposition chamb...

This paper presents the comparison of two 4.5kV diodes with expanded Safe Operating Area (SOA) in terms of an expansion to higher line voltages. In order to improve the reverse recovery characteristic the excess carrier concentration close to the anode during the on-state has to be reduced. To control the injection efficiency of the anode two state of the art technologies, the reduction of the ...

We report electronic Raman scattering measurements on Bi2Sr2(Y1−xCax)Cu2O8+δ single crystals at different doping levels. The dependence of the spectra on doping and on incoming photon energy is analyzed for different polarization geometries, in the superconducting and in the normal state. We find the scaling behavior of the superconductivity pair-breaking peak with the carrier concentration to ...

ZnMg and NbCl5 were intercalated in graphite and the presence of such molecules between the graphene sheets results in nand p-type doping, respectively. The doping effect is confirmed by Hall and Raman measurements and the intercalation process is monitored by scanning tunneling microscopy. After intercalation the carrier concentration increase almost an order of magnitude and reaches values as...