This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and inside the III-N barrier cause an increase in dynamic on-resistance and a shift of threshold voltage, ...

Organosilicate glass (OSG) is a material that is used as a dielectric in advanced integrated circuits. It has a network structure similar to that of amorphous silica where a fraction of the Si–O bonds have been replaced by organic groups. It is well known from prior work that OSG is sensitive to subcritical crack growth as water molecules in the environment are transported to the crack tip and ...

The combination of chemical oxidation methods with biotechnology to removal recalcitrant VOCs is a promising technology. In this paper, the aim was to identify the role of key process parameters and biodegradability of the degradation products using a dielectric barrier discharge (DBD) reactor, which provided the fundamental data to evaluate the possibilities of the combined system. Effects of ...

abstract time domain reflectometry (tdr) is a widely used method for measuring the dielectric constant (ka) and bulk electrical conductivity (σa) in soils. the tdr-measured σa and ka can be used to calculate the soil solution electrical conductivity, (σp). a theoretical model describing a linear relationship between bulk electrical conductivity, σa, and dielectric constant, ka, in moist soil wa...

In this work, the effects of frequency dependence transparent dielectric based on Spin-on Glass (SOG) under electrical stress is presented. The SOG thin films were cured at 200 °C in ambient air. capacitance-voltage and capacitance-frequency characteristics measured Metal-Oxide-Semiconductor (MOS) capacitors using film. addition, applied to MOS different voltage values during a long period time...